Zobrazeno 1 - 4
of 4
pro vyhledávání: '"N A Strugov"'
Autor:
A. Ya. Shik, E. Yu. Kotel’nikov, V. E. Tokranov, N. A. Strugov, A. M. Georgievskii, B. S. Ryvkin, V. A. Solov’ev
Publikováno v:
Semiconductors. 31:378-383
A phenomenological theory describing nonstationary carrier transport processes in a system of undoped quantum wells with short carrier generation pulses is developed. An experimental method for finding the characteristic carrier trapping and carrier
Autor:
A P Shcurko, G. A. Fokin, A Yu Ostrovsky, V. P. Chaly, Yu.V. Pogorelsky, A. L. Ter-Martirosyan, V.E. Myachin, S. Yu. Karpov, M. I. Etinberg, I. Yu. Rusanovich, A Sokolov, N A Strugov
Publikováno v:
Semiconductor Science and Technology. 9:345-348
The influence of the growth temperature of ternary compounds on the degradation rate of AlGaAs/GaAs laser diodes was studied. The optimal temperature was found to be 700 degrees C. A further reduction in the degradation rate may be achieved by using
Autor:
V E Nadtocheev, V V Firsov, Nikolai V Kravtsov, D. Z. Garbuzov, V. V. Dedysh, O E Naniĭ, A. V. Kochergin, N. A. Strugov, A N Shelaev
Publikováno v:
Soviet Journal of Quantum Electronics. 19:1557-1558
Miniature monolithic solid-state YAG:Nd3+ ring lasers (chip lasers) with a planar or a nonplanar ring resonator and a highly efficient pumping by a quantum-well semiconductor InGaAsP/GaAs laser were constructed and investigated. The conditions for hi
Publikováno v:
Electronics Letters. 25:1239
Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100μm-wide stripes that were fabricated from these structures emit over 1 W of optical power per fac