Zobrazeno 1 - 10
of 44
pro vyhledávání: '"N A Nebogatikova"'
Autor:
N. N. Kurus, I. A. Milekhin, N. A. Nebogatikova, I. V. Antonova, E. E. Rodyakina, A. G. Milekhin, A. V. Latyshev, D. R. T. Zahn
Publikováno v:
The Journal of Physical Chemistry C. 127:5013-5020
Autor:
N. P. Stepina, M. G. Rybin, N. A. Nebogatikova, Oleg E. Tereshchenko, Irina V. Antonova, V.A. Golyashov, Vladimir A. Volodin, Konstantin A. Kokh, V.V. Kirienko, E. D. Obrazstova
Publikováno v:
Journal of Materials Science. 56:9330-9343
Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thickne
Autor:
E. A. Yakimchuk, V. I. Vdovin, Anton K. Gutakovskii, N. A. Nebogatikova, Irina V. Antonova, Artem I. Ivanov, R. A. Soots, I. A. Kotin, Kurkina
Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree, composite graphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5393e1fe38ddaae3aa84ec79474a397c
http://arxiv.org/abs/2205.07602
http://arxiv.org/abs/2205.07602
Publikováno v:
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM).
A method for the synthesis of composite nanoparticles based on hexagonal boron nitride (h-BN) and graphene (G) was found, and the morphological and electrical properties of films made from composites of variable compounds were studied. When studying
Autor:
Vladimir A. Skuratov, Andrzej Olejniczak, M. Kulik, N. A. Nebogatikova, Irina V. Antonova, Aleksei V. Frolov
Publikováno v:
Carbon. 141:390-399
Herein, we report the fabrication of nanometer-sized reduced graphene oxide (rGO) spots by swift heavy-ion (SHI) bombardment. Such structures can be considered graphene quantum dots (QDs) embedded in a non-conducting matrix. Both the number density a
Publikováno v:
Materials
Materials, Vol 13, Iss 5, p 1032 (2020)
Volume 13
Issue 5
Materials, Vol 13, Iss 5, p 1032 (2020)
Volume 13
Issue 5
The resistivity of different films and structures containing fluorinated graphene (FG) flakes and chemical vapor deposition (CVD)-grown graphene of various fluorination degrees under tensile and compressive strains due to bending deformations was stu
Autor:
V.K. Muraveva, Nikolay G. Naumov, S. Cordier, I. V. Yushina, N. A. Nebogatikova, S.E. Khandarkhaeva, E.Ya. Gatapova, T.A. Pomelova, T. Yu. Podlipskaya
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, 2018, 228, pp.261-266. ⟨10.1016/j.mseb.2017.12.006⟩
Materials Science and Engineering: B, Elsevier, 2018, 228, pp.261-266. ⟨10.1016/j.mseb.2017.12.006⟩
Materials Science and Engineering: B, 2018, 228, pp.261-266. ⟨10.1016/j.mseb.2017.12.006⟩
Materials Science and Engineering: B, Elsevier, 2018, 228, pp.261-266. ⟨10.1016/j.mseb.2017.12.006⟩
Although many of the nanoparticles containing lanthanoids are deeply investigated, the reports concerning chalcogenide materials are scarce. Comprehensive exploration of properties of these materials requires a proper preparation method avoiding hydr
Autor:
Sergey V. Erohin, Arkady V. Krasheninnikov, Irina V. Antonova, Vladimir A. Volodin, Andrzej Olejniczak, L. A. Chernozatonskii, A. V. Skuratov, Dmitry G. Kvashnin, Pavel B. Sorokin, N. A. Nebogatikova
Publikováno v:
NANOSCALE. 10(30):14499-14509
The morphology and electronic properties of single and few-layer graphene films nanostructured by the impact of heavy high-energy ions have been studied. It is found that ion irradiation leads to the formation of nano-sized pores, or antidots, with s
Autor:
Vladimir A. Katarzhis, Artem I. Ivanov, Anton K. Gutakovskii, R. A. Soots, Irina I. Kurkina, Irina V. Antonova, Alexey N. Bocharov, Marina B. Shavelkina, Dmitriy A. Poteryaev, N. A. Nebogatikova, Vladimir A. Volodin, Peter P. Ivanov
Publikováno v:
Advanced Engineering Materials. 24:2100917
Publikováno v:
Semiconductors. 51:1306-1312
The mechanism of resistive switching in films of partially fluorinated graphene is investigated. The films are obtained on the basis of a number of graphene suspensions with different composition and various degree of fluorination. The dependence of