Zobrazeno 1 - 10
of 100
pro vyhledávání: '"N A Kalyuzhnyy"'
Autor:
A. A. Kharchenko, A. M. Nadtochiy, A. A. Serin, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov, M. V. Maximov, S. Breuer
Publikováno v:
Semiconductors. 56:329-332
Autor:
S. A. Mintairov, S. A. Blokhin, N. A. Kalyuzhnyy, M. V. Maximov, N. A. Maleev, A. M. Nadtochiy, R. A. Salii, N. V. Kryzhanovskaya, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:161-164
Autor:
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorobiev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:90-94
Autor:
A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Y. Soldatenkov, M. Z. Shvarts, V. M. Andreev
Publikováno v:
Semiconductors. 55:686-690
Autor:
N. A. Kalyuzhnyy, N. V. Kryzhanovskaya, Mikhail V. Maximov, S. A. Mintairov, Eduard Moiseev, M. M. Kulagina, Alexey E. Zhukov, Alexey M. Nadtochiy, A. A. Kharchenko
Publikováno v:
Technical Physics Letters. 46:629-632
The feasibility of detecting the emission of a microdisk laser with a diameter of 23 μm with an active region based on InGaAs/GaAs quantum well-dots using a nearby photodetector (100 × 4000 μm) with a similar active region is demonstrated. For con
Autor:
null V. M. Andreev, null V.R. Larionov, null P.V. Pokrovskii, null D. A. Malevskii, null R.A. Salii, null R.V. Levin, null F. Y. Soldatenkov, null N. A. Kalyuzhnyy, null A. V. Malevskaya
Publikováno v:
Technical Physics. 68:161
Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic conta
Publikováno v:
Technical Physics Letters. 45:1100-1102
An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light
Autor:
Mikhail V. Maximov, S. A. Mintairov, Sergey A. Blokhin, N. A. Kalyuzhnyy, A. E. Zhukov, N. V. Kryzhanovskaya, M. M. Kulagina, F. I. Zubov, Eduard Moiseev, Alexey M. Mozharov, Yu. A. Guseva
Publikováno v:
Semiconductors. 53:1099-1103
Microdisk lasers 10–30 μm in diameter operating at room temperature without thermal stabilization and with an active region based on nanostructures of hybrid dimensionality—quantum wells–dots—are investigated. High-frequency measurements of
Autor:
A. A. Serin, A. E. Zhukov, S. A. Mintairov, G. O. Kornyshov, N. A. Kalyuzhnyy, A. M. Nadtochiy, A. S. Payusov, V. N. Nevedomsky, Yu. M. Shernyakov, Mikhail V. Maximov, N. Yu. Gordeev
Publikováno v:
Technical Physics Letters. 45:163-166
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths