Zobrazeno 1 - 10
of 15
pro vyhledávání: '"N A Bogoslovskiy"'
Publikováno v:
JETP Letters. 114:347-353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee0f7b7c46bec158fed44d19b75d5525
https://doi.org/10.1134/s0021364021180077
https://doi.org/10.1134/s0021364021180077
Publikováno v:
Semiconductors. 54:450-453
The current–voltage characteristics measured on Ge2Sb2Te5 thin films in the current mode are studied. The effect of multilevel recording is established when applying sequential current pulses with increasing maxima. It is shown that this effect can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584e4f8548c1140b921431db8b936f29
https://doi.org/10.1134/s1063782620040065
https://doi.org/10.1134/s1063782620040065
Publikováno v:
Physics of the Solid State. 61:2005-2009
The numerical simulation was applied to study the temperature dependence of the impurity magnetic susceptibility. The direct exchange interaction of the impurity magnetic moments randomly distributed in space was considered within the Ising model. Wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49aeee288799413b6d07c523ac594ea4
https://doi.org/10.1134/s1063783419110088
https://doi.org/10.1134/s1063783419110088
Publikováno v:
Low Temperature Physics. 45:146-152
This study presents the results of numerical simulation of donor-acceptor recombination spectra in compensated semiconductors taking into account electrostatic fluctuations associated with the presence of ionised impurities. The presence of Coulomb c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7010d4db5ca35a9211e596f7cd1f0886
https://doi.org/10.1063/1.5086403
https://doi.org/10.1063/1.5086403
Publikováno v:
Semiconductors. 52:1607-1610
The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6eb040d5e796e7f04ac5a9f1557cdf
https://doi.org/10.1134/s1063782618120084
https://doi.org/10.1134/s1063782618120084
Publikováno v:
Journal of Physics: Conference Series. 2103:012087
The current-voltage characteristics of Ge2Sb2Te5 thin films were measured by a sequence of triangular current pulses with an increasing maximum current. Each current pulse forms in the sample a conducting filament with an area proportional to the max
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42898709ba68143da341d1d88d637bca
https://doi.org/10.1088/1742-6596/2103/1/012087
https://doi.org/10.1088/1742-6596/2103/1/012087
Autor:
N. A. Bogoslovskiy, K. D. Tsendin
Publikováno v:
Solid-State Electronics. 129:10-15
In the phase-change memory (PCM) crystallization occurs in the high-current filament which forms during switching to the conductive state. In the present paper we conduct a numerical modeling of the current filament formation dynamics in thin chalcog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d32e2f70ad3c98814b9514c50933d7e
https://doi.org/10.1016/j.sse.2016.11.018
https://doi.org/10.1016/j.sse.2016.11.018
Autor:
I. V. Sagunova, Petr Lazarenko, E. N. Redichev, A. V. Babich, Sergey Kozyukhin, N. A. Bogoslovskiy, Alexey Sherchenkov
Publikováno v:
Semiconductors. 51:146-152
The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors Ge2Sb2Te5, GeSb2Te5, and GeSb4Te7 are investigated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57cc70c38bb7014abda011feaa3edef2
https://doi.org/10.1134/s1063782617020191
https://doi.org/10.1134/s1063782617020191
Publikováno v:
Semiconductors. 50:888-893
The spectra of donor–acceptor light absorption and luminescence in lightly doped and lightly compensated semiconductors are calculated. In the photoluminescence calculation, two limiting cases of long and short carrier lifetimes relative to the car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0c53448a34c97880ac4a94a9a18b20
https://doi.org/10.1134/s1063782616070034
https://doi.org/10.1134/s1063782616070034