Zobrazeno 1 - 10
of 1 667
pro vyhledávání: '"Nötzel R"'
Autor:
Lopez-Ramirez, M.R., Sancho, L.G., de Vera, J.P., Baqué, M., Böttger, U., Rabbow, E., Martínez-Frías, J., de la Torre Noetzel, R.
Publikováno v:
In Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 15 November 2021 261
Autor:
Jiménez, J.J., Mánuel, J.M., Aseev, P., Soto Rodríguez, P.E.D., Nötzel, R., Gačević, Ž., Calleja, E., García, R., Morales, F.M.
Publikováno v:
In Journal of Alloys and Compounds 30 April 2019 783:697-708
Autor:
Birowosuto, M. D., Sumikura, H., Matsuo, S., Taniyama, H., van Veldhoven, P. J., Nötzel, R., Notomi, M.
Publikováno v:
Sci. Rep. 2 (2012) 321
High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom b
Externí odkaz:
http://arxiv.org/abs/1203.6171
Publikováno v:
Appl. Phys. Lett. 98, 211120 (2011)
We present a method for tuning the resonant wavelength of photonic crystal cavities (PCCs) around 1.55 um. Large tuning of the PCC mode is enabled by electromechanically controlling the separation between two parallel InGaAsP membranes. A fabrication
Externí odkaz:
http://arxiv.org/abs/1104.1112
Autor:
Kleemans, N. A. J. M., van Bree, J., Bozkurt, M., van Veldhoven, P. J., Nouwens, P. A., Nötzel, R., Silov, A. Yu., Flatté, M. E., Koenraad, P. M.
We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Micros
Externí odkaz:
http://arxiv.org/abs/0812.1723
We demonstrate electromagnetic interaction between distant quantum dots (QDs), as is observed from transient pump-probe differential reflectivity measurements. The QD-exciton lifetime is measured as a function of the probe photon energy and shows a s
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610204
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603845
Autor:
Prasanth, R., Haverkort, J. E. M., Deepthy, A., Bogaart, E. W., van der Tol, J. J. G. M., Patent, E. A., Zhao, G., Gong, Q., van Veldhoven, P. J., Noetzel, R., Wolter, J. H.
Publikováno v:
Appl. Phys. Lett. 84, 4059 (2004)
We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410440
Akademický článek
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Publikováno v:
In Materials Chemistry and Physics 16 June 2014 145(3):274-277