Zobrazeno 1 - 10
of 343
pro vyhledávání: '"N, Talwar"'
Autor:
Devki N. Talwar
Publikováno v:
Next Materials, Vol 4, Iss , Pp 100198- (2024)
A realistic rigid-ion-model (RIM) is adopted here to report the results of systematic calculations for comprehending the phonon dispersionsωjq→, structural, and thermodynamic traits of novel zinc-blende group-IV binary XC (X = Si, Ge, and Sn) mate
Externí odkaz:
https://doaj.org/article/dede043d91d24279a1757f2cdfc5cc37
Autor:
Devki N. Talwar, Piotr Becla
Publikováno v:
Solids, Vol 4, Iss 4, Pp 287-303 (2023)
Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)m/(GeC)n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method
Externí odkaz:
https://doaj.org/article/54d79cf2ca004f52934235b9b81b0b5e
Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms
Autor:
Devki N. Talwar, Zhe Chuan Feng
Publikováno v:
Molecules, Vol 29, Iss 17, p 4188 (2024)
Quaternary (AlxGa1−x)yIn1−yP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y) and keeping gro
Externí odkaz:
https://doaj.org/article/1ecb137a46674647827c453356618f10
Autor:
Devki N. Talwar, Jason T. Haraldsen
Publikováno v:
Nanomaterials, Vol 14, Iss 17, p 1439 (2024)
Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoe
Externí odkaz:
https://doaj.org/article/5e5e8da1f2454a52b6737a760a684095
Autor:
Devki N. Talwar
Publikováno v:
Inorganics, Vol 12, Iss 4, p 100 (2024)
Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sen
Externí odkaz:
https://doaj.org/article/67a6c4b4bef54c449342367a0dde6b55
Publikováno v:
Crystals, Vol 13, Iss 10, p 1508 (2023)
The lattice dynamical properties of dilute InAs1−xNx/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was e
Externí odkaz:
https://doaj.org/article/15b656ead6054f29ac2f1c78ddb5de97
Autor:
Devki N. Talwar, Hao-Hsiung Lin
Publikováno v:
Crystals, Vol 13, Iss 9, p 1367 (2023)
Experimental and theoretical assessments of phonon and optical characteristics are methodically accomplished for comprehending the vibrational, structural, and electronic behavior of InP1−xSbx/n-InAs samples grown by Gas-Source Molecular Beam Epita
Externí odkaz:
https://doaj.org/article/e1fe6486855a4acfa44b24d9813bfd7e
Publikováno v:
Symmetry, Vol 15, Iss 1, p 128 (2023)
In the framework of generalized Lorenz–Mie theory, we report here the results of our comprehensive study for analyzing and computing the optical torque (OT) caused by AGVBB on a charged sphere of arbitrary size. The effects of polarization, order,
Externí odkaz:
https://doaj.org/article/bdbdddb9597a4ac6a0156485a2d5d7e8
Autor:
Devki N. Talwar
Publikováno v:
Journal of Materials Science. 58:8379-8397
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::699416c052bbb72471474481e0a22c70
https://doi.org/10.1007/s10853-023-08477-5
https://doi.org/10.1007/s10853-023-08477-5
Autor:
Yaohui Chen, Daihua Chen, Liufang Meng, Lingyu Wan, Huilu Yao, Junyi Zhai, Changlai Yuan, Devki N. Talwar, Zhe Chuan Feng
Publikováno v:
Royal Society Open Science, Vol 7, Iss 9 (2020)
A sol–gel method is employed for preparing high quality lead-free glass-ceramic samples (1 − x)BCZT-xBBS—incorporating Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) powder and Bi2O3-B2O3-SiO2 (BBS) glass-doped additives with different values of x (x = 0, 0.0
Externí odkaz:
https://doaj.org/article/b5baffc5d85a49bb921ae4ba79e88c1c