Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Myungsoo Yeo"'
Autor:
Myungsoo Yeo, Hyunchul Sagong, Eun-Cheol Lee, Kihyun Choi, Tae-Young Jeong, Minjung Jin, Hai Jiang, Hwa-Sung Rhee
Publikováno v:
2020 IEEE International Integrated Reliability Workshop (IIRW).
Self-heating effect (SHE, $\Delta T_{sh}$) has been aggravated due to compact layout footprint in advanced FinFET technology, which needs a significant concern for device performance, variability and reliability co-optimization. In this paper, we cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759391534604a5f7823384432169023d
https://doi.org/10.1109/iirw49815.2020.9312859
https://doi.org/10.1109/iirw49815.2020.9312859
Autor:
Minjung Jin, Soonwan Kwon, Taiki Uemura, Y. Kim, J.M. Park, Hwa-Sung Rhee, Young-Joon Cho, Mi-Hyang Lee, Bomi Kim, Kihyun Choi, Tae-Young Jeong, Myeong-cheol Kim, Hyewon Shim, Hai Jiang, Hyunchul Sagong, K. Kim, Won-Jin Kim, Hyeonwoo Nam, D. Mun, Sangwoo Pae, E. Kwon, Myungsoo Yeo, Bang-Lin Lee
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
The product reliability of 7nm FinFET technology is demonstrated with 5G SoC platform. RO aging and other highspeed operating 5G IPs show an expected reliability model behavior, which has further improvement of frequency noise reduction through 3-pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612047cdc3eb0b3d16f46a21e99263a3
https://doi.org/10.1109/vlsitechnology18217.2020.9265018
https://doi.org/10.1109/vlsitechnology18217.2020.9265018
Autor:
Tae-Young Jeong, Jinseok Kim, Myungsoo Yeo, Jonghyuk Park, Miji Lee, Sari Windu, Hyunjun Choi, Yuri Choi, Yunkyung Jo, Mi-ji Lee, Sangwoo Pae
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
In this paper, we investigated the IMD (Inter-metal Dielectric) TDDB model where the BEOL interconnect physical spacing is reduced to less than 10nm as scaling progresses. IMD TDDB experiments were performed on 14 and 10 nm process technologies which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c2611c31ba454aa94b772f12efa608
https://doi.org/10.1109/iitc-amc.2017.7968978
https://doi.org/10.1109/iitc-amc.2017.7968978
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
TSV is the key component in fabricating 3-D ICs which can bring lower power consumption, higher integration density and shorter interconnection length. Very few works on EM and TDDB of TSV have been done. Thus, TSV macros with BEOL and backside metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d44311b4353d924d808d49e43b2f412a
https://doi.org/10.1109/iitc.2012.6251574
https://doi.org/10.1109/iitc.2012.6251574
Autor:
Andrew T. Kim, Miji Lee, Seung-Man Choi, Myungsoo Yeo, Tae-Young Jeong, Dong-Cheon Baek, Jongwoo Park
Publikováno v:
2011 International Reliability Physics Symposium.
In this study, intuitive is given on time-dependent thermal characteristics in multilevel interconnects subjected to carry either DC or pulsed-DC. FEM simulation is employed to model the propensity of temperature profile with respect to the variety o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0f706b3d5e9bec7423daa182b07a3e
https://doi.org/10.1109/irps.2011.5784569
https://doi.org/10.1109/irps.2011.5784569