Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Myunghan Bae"'
Autor:
Hee Ho Lee, Myunghan Bae, Sung-Hyun Jo, Jang-Kyoo Shin, Dong Hyeok Son, Chul-Ho Won, Hyun-Min Jeong, Jung-Hee Lee, Shin-Won Kang
Publikováno v:
Sensors, Vol 15, Iss 8, Pp 18416-18426 (2015)
In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the senso
Externí odkaz:
https://doaj.org/article/fe83304692c44a1bb0be225883c479b2
Autor:
Myunghan Bae, Byung-Soo Choi, Sang-Hwan Kim, Jimin Lee, Chang-Woo Oh, Pyung Choi, Jang-Kyoo Shin
Publikováno v:
Proceedings, Vol 1, Iss 4, p 338 (2017)
We propose a linear-logarithmic CMOS image sensor with reduced fixed pattern noise (FPN). The proposed linear-logarithmic pixel based on a conventional 3-transistor active pixel sensor (APS) structure has additional circuits in which a photogate and
Externí odkaz:
https://doaj.org/article/421e6c6c26764e328497928c24f1e7d4
Autor:
Jesuk Lee, Yi-tae Kim, Young-Chan Kim, Myeonggyun Kye, Hoyong Lee, Jaeil An, Myunghan Bae, Bumsik Chung, Sungyoung Seo, Daeyun Kim, Myoungoh Ki, Sooho Son, S.L. Cho, Yeomyung Kim, Min-Sun Keel, Jung-Chak Ahn, Youngsun Oh, Seung Chul Shin, Yong Hun Kwon, Young-Gu Jin
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:3209-3219
A 1.2-Mpixel indirect time-of-flight (ToF) CMOS image sensor is presented to lower peak current and to cancel out multi-user interference. The proposed 4-tap 3.5- $\mu \text{m}$ demodulation pixel is optimally designed to improve quantum efficiency (
Autor:
Daeyun Kim, Sung-Ho Choi, Sungyoung Seo, Taemin An, Myoungoh Ki, Taesub Jung, Sooho Son, Kwanghyuk Bae, Sae-Young Kim, Young-Gu Jin, Hogyun Kim, Bumsik Chung, Joonseok Kim, Seoungjae Yoo, Yong Hun Kwon, Chang-Rok Moon, Yeomyung Kim, Young-Chan Kim, Myunghan Bae, Seung Chul Shin, Min-Sun Keel, Hyunsurk Ryu
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:889-897
A video graphics array (VGA) (640 $\times $ 480) indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7- $\mu \text{m}$ global-shutter pixel in 65-nm back-side illumination (BSI) process. With a 4-tap pixel structure, we achie
Autor:
Myoungoh Ki, Yeomyung Kim, Kyoung-Min Koh, Sungyoung Seo, S.L. Cho, Hoyong Lee, Youngsun Oh, Seung Chul Shin, Sunjoo Hong, Jaeil An, Sooho Son, Young-Chan Kim, Bumsik Chung, Yong Hun Kwon, Myunghan Bae, Min-Sun Keel, Yi-tae Kim, Young-Gu Jin, Jung-Chak Ahn, Heeyoung Jo, Yongin Park, Daeyun Kim
Publikováno v:
ISSCC
The evolution of 3D depth-sensing technology enables various applications in mobile devices, from conventional photography enhancement (e.g., autofocus and bokeh effect) to new applications such as augmented reality and 3D scanning. Usually, 3D depth
Autor:
Min-Sun Keel, Young-Chan Kim, Daeyun Kim, Youngsun Oh, Seung Chul Shin, Myunghan Bae, Sungyoung Seo, Sung-Ho Choi, Sunju Hong, S.L. Cho, Yeomyung Km, Young-Gu Jin, Taeun Hwang, Jung-Chak Ahn, Kyoung-Min Koh, Ho Woo Park, Yong Hun Kwon, Seok-Ha Lee, Yi-tae Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high q
Autor:
Chul-Ho Won, Sung-Hyun Jo, Myunghan Bae, Hee Ho Lee, Jung-Hee Lee, Jang-Kyoo Shin, Dong Hyeok Son
Publikováno v:
Sensors and Actuators B: Chemical. 234:316-323
In this paper, we have investigated the characteristics of the differential-mode high electron mobility transistor (HEMT)-based biosensor. An Au-gate HEMT is the sensing device that reacts with biomolecules, whereas the Pt-gate HEMT is the dummy devi
Autor:
Chang-Rok Moon, Hogyun Kim, Kwanghyuk Bae, Seung Chul Shin, Taesub Jung, Sooho Son, Hyunsurk Ryu, Sung-Ho Choi, Min-Sun Keel, Yeomyung Kim, Sungyoung Seo, Yong Hun Kwon, Young-Gu Jin, Myoungoh Ki, Young-Chan Kim, Myunghan Bae, Taemin An, Bumsik Chung, Sae-Young Kim, Daeyun Kim
Publikováno v:
VLSI Circuits
${A}640 \times 480$ indirect Time-of-Flight (ToF) CMOS image sensor has been designed with 4-tap $7-\mu \mathrm{m}$ global-shutter pixel in 65-nm back-side illumination (BSI) process. With novel 4tap pixel structure, we achieved motion artifact-free
Publikováno v:
Journal of Sensor Science and Technology. 25:320-325
In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, wh
Publikováno v:
IEEE Sensors Journal. 16:5222-5226
A new pixel structure is proposed for wide dynamic range CMOS image sensors. A pixel based on a three-transistor active pixel sensor has two linear responses and a logarithmic response using additional circuits. The photogate surrounding the n+/p-sub