Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Myunggon Kang"'
Publikováno v:
Microwave and Optical Technology Letters. 59:3151-3154
This article presents an optimization technique aiming to improve gain and noise performances simultaneously, through the design of a cost-effective low noise amplifier (LNA) in a mixed-signal CMOS process without an RF triple-well option. To allevia
Publikováno v:
Microelectronics Journal. 61:1-5
An extremely low power and low voltage UWB-IR LNA for the 35GHz range is presented. Based on the bias optimization methodology, an extremely low drain bias (0.25-V) combined with an optimum gate voltage scheme is applied to a two-stage common-source
Publikováno v:
Journal of nanoscience and nanotechnology. 19(10)
In this paper, lateral gate-all-around nano-plate transistors (NP-FETs) for 3.5 nm technology node were optimized and compared with other nodes such as 7 nm and 5 nm node devices. The transistors' electrostatic was analyzed using a 3D TCAD simulation
Publikováno v:
Microwave and Optical Technology Letters. 59:1405-1407
In this letter, we evaluate the noise figure (NF) improvement that results from controlling the parasitic gate resistance of a radio-frequency (RF) low noise amplifier (LNA). By optimizing the number of gate contacts and wiring modifications in our f
Publikováno v:
Microwave and Optical Technology Letters. 60:528-528
Publikováno v:
Microwave and Optical Technology Letters. 59:2413-2413
Publikováno v:
Japanese Journal of Applied Physics. 56:020303
60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET’s unique property of high s