Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Myung-Su Kim"'
Autor:
Seokho Seo, Beomjin Kim, Donghoon Kim, Seungwoo Park, Tae Ryong Kim, Junkyu Park, Hakcheon Jeong, See-On Park, Taehoon Park, Hyeok Shin, Myung-Su Kim, Yang-Kyu Choi, Shinhyun Choi
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
The conventional von Neumann computing architecture is ill suited to data intensive tasks as data must be repeated moved between the separated processing and memory units. Here, Seo et al propose a CMOS compatible, highly linear gate injection field-
Externí odkaz:
https://doaj.org/article/8757bfd594c543c4862a6dc6d94ed7ee
Autor:
Seong-Joo Han, Joon-kyu Han, Myung-Su Kim, Gyeong-Jun Yun, Ji-Man Yu, Il-Woong Tcho, Myungsoo Seo, Geon-Beom Lee, Yang-Kyu Choi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract A ternary logic decoder (TLD) is demonstrated with independently controlled double-gate (ICDG) silicon-nanowire (Si-NW) MOSFETs to confirm a feasibility of mixed radix system (MRS). The TLD is essential component for realization of the MRS.
Externí odkaz:
https://doaj.org/article/c21f1688580f413898e210f3e8a1f845
Autor:
Seong‑Joo Han, Joon‑Kyu Han, Myung‑Su Kim, Gyeong‑Jun Yun, Ji‑Man Yu, Il‑Woong Tcho, Myungsoo Seo, Geon‑Beom Lee, Yang‑Kyu Choi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/d07c78c6c9834507acd0ce2cf1b71b49
Publikováno v:
Micromachines, Vol 12, Iss 8, p 899 (2021)
For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an op
Externí odkaz:
https://doaj.org/article/675ca81368fe42e6a41437ed16b7d41a
Publikováno v:
IEEE Access, Vol 11, Pp 68632-68642 (2023)
Coils excited for high magnetic fields have large discharging time constants owing to high inductance and low resistance for large operating currents. This type of coil requires a de-excitation system to reduce the current as quickly as possible when
Externí odkaz:
https://doaj.org/article/8899c17b69574872b6ebf28e1dcf7b5e
Autor:
MYUNG SU KIM1, YOJONG CHOI1, SEUNGHYUN SONG1, SEUNG-YOUNG PARK1, YEON SUK CHOI1 ychoi@kbsi.re.ki
Publikováno v:
High Temperatures - High Pressures. 2022, Vol. 51 Issue 6, p477-485. 9p.
Autor:
Jung-Woo Lee, Joon-Kyu Han, Myung-Su Kim, Ji-Man Yu, Jin-Woo Jung, Seong-Yun Yun, Yang-Kyu Choi
Publikováno v:
IEEE Transactions on Electron Devices. 69:6133-6138
Publikováno v:
High Temperatures - High Pressures. 2021, Vol. 50 Issue 4/5, p265-276. 12p.
Autor:
Myung-Su Kim, Gyeong-Jun Yun, Wu-Kang Kim, Myungsoo Seo, Da-Jin Kim, Ji-Man Yu, Joon-Kyu Han, Jae Hur, Geon-Beom Lee, Seong-Yeon Kim, Dae-Hwan Yun, Yang-Kyu Choi
Publikováno v:
IEEE Electron Device Letters. 43:521-524
Autor:
Hyun-Jung Kim, Geon-Beom Lee, Joon-Kyu Han, Seong-Joo Han, Da-Jin Kim, Ji-Man Yu, Myung-Su Kim, Yang-Kyu Choi
Publikováno v:
IEEE Electron Device Letters. 43:370-373