Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Myung-Soo Huh"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract A simple sidewall patterning process for organic–inorganic multilayer thin-film encapsulation (TFE) has been proposed and demonstrated. An Al2O3 thin film grown by atomic layer deposition (ALD) was patterned by adhesion lithography using t
Externí odkaz:
https://doaj.org/article/4382d9dd40844794aac2203215c3a001
Autor:
Sung Hun Key, Dong Pyo Jeon, Sae Hong Kim, Jung Gon Kim, Choel Min Jang, Myung Soo Huh, Eun Sun Jung
Publikováno v:
SID Symposium Digest of Technical Papers. 51:305-308
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a9cd48ec8fd6d244d14c5ba374815d
https://doi.org/10.1002/sdtp.13864
https://doi.org/10.1002/sdtp.13864
Publikováno v:
Applied Physics Express. 11:086502
The folding stabilities of an inorganic single layer and an organic?inorganic multilayer based on the degree of deviation from the neutral plane were investigated for the application of the encapsulation layer to foldable organic light-emitting diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc9cb0cec7f4ff4c416f535085d3691
https://doi.org/10.7567/apex.11.086502
https://doi.org/10.7567/apex.11.086502
Autor:
Jae Kyeong Jeong, Hyeong Joon Kim, Myung Soo Huh, Seung Ha Oh, Bong Sop Yang, Seok-jun Won, Cheol Seong Hwang
Publikováno v:
ECS Transactions. 25:119-126
Recently, amorphous InGaZnO thin film transistors (TFTs) have been intensively studied because they exhibit large mobility (>10cm/Vs) and relatively good stability despite their amorphous phase. Before InGaZnO TFTs as a backplane device are adopted i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a35867b44d296fdc1d79fc0244e99a6b
https://doi.org/10.1149/1.3422588
https://doi.org/10.1149/1.3422588
Autor:
Bong Seop Yang, Myung Soo Huh, Jaeyeong Heo, Cheol Seong Hwang, Hyeong Joon Kim, Kap-Soo Yoon, Sung-Hoon Yang, Sang Jin Han, Joohei Lee
Publikováno v:
Thin Solid Films. 518:1170-1173
The improved structural and electrical properties of tin-oxide films produced by using ultralow-pressure sputtering (ULPS) method are reported. The Hall mobility of the film (~ 13 cm2/V s) deposited using ULPS was about 1.5 times higher than that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1f89593c211e79951dce67c643c1f5
https://doi.org/10.1016/j.tsf.2009.05.051
https://doi.org/10.1016/j.tsf.2009.05.051
Autor:
Hyeong Joon Kim, Yu Jin Choi, Jaeyeong Heo, Myung Soo Huh, Sang-Hyun Park, Sungin Suh, Cheol Seong Hwang, Seok-jun Won
Publikováno v:
ECS Transactions. 25:367-376
For the first time, we report transparent analog capacitors using ITO electrodes and HfO2 (and/or Al2O3) high-k dielectrics. The use of ITO bottom and top electrodes did not cause the electrical degradation to the capacitor compared to TiN and Pt ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a696ef098b95333d16698a2fd3a90c
https://doi.org/10.1149/1.3205071
https://doi.org/10.1149/1.3205071
Publikováno v:
IEEE Electron Device Letters. 31:857-859
Recently, SiO2 grown at low temperatures has been highlighted for a range of applications. In this letter, SiO2 films were deposited at 280°C by plasma-enhanced atomic layer deposition (ALD) using bis-diethylamino-silane and O2 plasma. The electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34636478d6a8468bff587a61b93bf1c7
https://doi.org/10.1109/led.2010.2049978
https://doi.org/10.1109/led.2010.2049978
Autor:
Myeong Sook Oh, Myung Soo Huh, Ung Lee, Jong-Ho Lee, Yoon Jang Kim, Bong Seob Yang, Seong Ha Oh, Hyeong Joon Kim
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:031501
In this work, we investigated the structural, electrical and optical properties of molybdenum oxide thin films deposited by the reactive dc magnetron sputtering method. The molybdenum oxide films were prepared at sputtering pressures ranging from 6.7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3036020d04216fd2d73f95bc54f4df2
https://doi.org/10.1116/1.3692753
https://doi.org/10.1116/1.3692753
Autor:
Myeong Sook Oh, Bong Seob Yang, Hyeong Joon Kim, Myung Soo Huh, Seok-jun Won, Jae Kyeong Jeong, Seung Ha Oh
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:031201
Thin film transistors (TFTs) were fabricated with a zinc oxide (ZnO) channel deposited by ultralow-pressure sputtering (ULPS) at a pressure less than 1.3×10−3 Pa. The field-effect mobility (μFE) and the subthreshold gate swing (SS) of the ULPS-Zn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8968cf66c5e10e64fb296d8d181b3b
https://doi.org/10.1116/1.3571760
https://doi.org/10.1116/1.3571760
Autor:
Bong Seob Yang, Ung Lee, Jae Kyeong Jeong, Cheol Seong Hwang, Hyeong Joon Kim, Myung Soo Huh, Yoon Jang Kim, Myeong Sook Oh, Seung Ha Oh
Publikováno v:
Applied Physics Letters. 98:122110
Thin film transistors (TFTs) with In and Ga-free multicomponent Zn–Sn–Zr–O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO2 into the Zn–Sn–O (ZTO) films increased the contact resistance, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae18c861e1b1a568ca7d99e354b60322
https://doi.org/10.1063/1.3571448
https://doi.org/10.1063/1.3571448