Zobrazeno 1 - 10
of 171
pro vyhledávání: '"Myung Jae Lee"'
Autor:
Junho Lee, Jee Young Kwak, Kyobin Keum, Kang Sik Kim, Insoo Kim, Myung‐Jae Lee, Yong‐Hoon Kim, Sung Kyu Park
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 4, Pp n/a-n/a (2024)
Tactile sensory systems play a vital role in various emerging fields including robotics, prosthetics, and human–machine interfaces. However, traditional tactile sensors are typically designed to detect a single stimulus through a lock‐and‐key m
Externí odkaz:
https://doaj.org/article/8bae7bceebf94956bcbbf2b9dd322bb0
Publikováno v:
Photonics, Vol 10, Iss 7, p 746 (2023)
This paper presents three different types of on-chip avalanche photodiodes (APDs) realized in a TSMC 180 nm 1P6M RF CMOS process, i.e., a P+/N-well (NW) APD for its high responsivity and large bandwidth by excluding slow diffusion currents; a P+/Deep
Externí odkaz:
https://doaj.org/article/de0af07256514f3a94c5d865b3ffe2a4
Publikováno v:
IEEE Sensors Journal. 23:4930-4939
Autor:
Eunsung Park, Won-Yong Ha, Hyo-Sung Park, Doyoon Eom, Hyun-Seung Choi, Dae-Hwan Ahn, Woo-Young Choi, Myung-Jae Lee
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. :1-8
Publikováno v:
The Journal of Supercomputing. 79:7132-7159
Autor:
Myung-jae Lee
Publikováno v:
JOURNAL OF ASIAN HISTORICAL STUDIES. 160:211-244
Autor:
Myung-jae Lee
Publikováno v:
YŎKSA WA HYŎNSIL : Quarterly Review of Korean History. 125:193-232
Autor:
Jiuxuan Zhao, Tommaso Milanese, Francesco Gramuglia, Pouyan Keshavarzian, Shyue Seng Tan, Michelle Tng, Louis Lim, Vinit Dhulla, Elgin Quek, Myung-Jae Lee, Edoardo Charbon
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD cell is pass
Autor:
Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung-Jae Lee, Claudio Bruschini, Anthony J. SpringThorpe, Alexandre W. Walker, Costel Flueraru, Oliver J. Pitts, Edoardo Charbon
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-9
This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion pro
Publikováno v:
Photonics; Volume 10; Issue 7; Pages: 746
This paper presents three different types of on-chip avalanche photodiodes (APDs) realized in a TSMC 180 nm 1P6M RF CMOS process, i.e., a P+/N-well (NW) APD for its high responsivity and large bandwidth by excluding slow diffusion currents; a P+/Deep