Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Myung Gwan, Hahm"'
Autor:
Beomsu Jo, Kanghoon Seo, Kyumin Park, Chaewon Jeong, Bathalavaram Poornaprakash, Moonsang Lee, Singiri Ramu, Myung Gwan Hahm, Young Lae Kim
Publikováno v:
Frontiers in Materials, Vol 11 (2024)
The development of photodetectors is crucial in fields such as optical communication, image sensing, medical devices and military equipment, where high sensitivity is paramount. We fabricated an ambipolar photodiode using monolayer triclinic ReSe2, s
Externí odkaz:
https://doaj.org/article/d6ee58d43701481fbf413c302cb1c87f
Autor:
Nicole Joy Bassous, Ashly Corona Rodriguez, Celina Ivonne Lomeli Leal, Hyun Young Jung, Chang Kee Lee, Sangwon Joo, Sumin Kim, Changhun Yun, Myung Gwan Hahm, Myoung‐Hwan Ahn, Sang‐Woo Kim, Young Suk Oh, Su Ryon Shin
Publikováno v:
Advanced Sensor Research, Vol 3, Iss 2, Pp n/a-n/a (2024)
Abstract Elucidating the capital mechanism for detecting greenhouse gases (GHGs) in the atmosphere, based on sensitivity, performance, and cost‐effectiveness, is challenging, but markedly needed in the presence of global climate change caused by GH
Externí odkaz:
https://doaj.org/article/22874fb56d0741cf9755690dc5a984ee
Autor:
Sen Gao, Sanghyun Hong, Soohyung Park, Hyun Young Jung, Wentao Liang, Yonghee Lee, Chi Won Ahn, Ji Young Byun, Juyeon Seo, Myung Gwan Hahm, Hyehee Kim, Kiwoong Kim, Yeonjin Yi, Hailong Wang, Moneesh Upmanyu, Sung-Goo Lee, Yoshikazu Homma, Humberto Terrones, Yung Joon Jung
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
The preparation of quantum silicon nanowires, materials with potential application in high-performance nanodevices, is challenging. Here, the authors synthesize vertically aligned sub-5 nm silicon nanowires via a vapor phase silicon etching process;
Externí odkaz:
https://doaj.org/article/4349107a619842719b49a7565f2af2de
Autor:
Un Jeong Kim, Seung Hyun Nam, Seok In Kim, Yoojoong Han, Jeechan Yoon, Humberto R. Gutiérrez, Miyeon Cheon, Gun Cheol Kim, Yeonsang Park, Moonsang Lee, Myung Gwan Hahm, Hyungbin Son
Publikováno v:
AIP Advances, Vol 12, Iss 10, Pp 105105-105105-7 (2022)
The Raman tensors of the three modes at ∼55, ∼80, and ∼160 cm−1 for the non-van der Waals layered material Bi2O2Se, which were assigned to Eu, Eg, and A1g, respectively, were experimentally investigated. Two modes at ∼55 and ∼80 cm−1, w
Externí odkaz:
https://doaj.org/article/e4fc56da7fc04ef6bd902bd06365f63a
Autor:
Bolim You, Jeechan Yoon, Yuna Kim, Mino Yang, Jina Bak, Jihyang Park, Un Jeong Kim, Myung Gwan Hahm, Moonsang Lee
Publikováno v:
Journal of Materials Chemistry C; 5/14/2024, Vol. 12 Issue 18, p6596-6605, 10p
Autor:
Juyeon Seo, Seung Hyun Nam, Moonsang Lee, Jin-Young Kim, Seung Gyu Kim, Changkyoo Park, Dong-Woo Seo, Young Lae Kim, Sang Sub Kim, Un Jeong Kim, Myung Gwan Hahm
Publikováno v:
iScience, Vol 25, Iss 1, Pp 103660- (2022)
Summary: Novel gas sensors that work at room temperature are attracting attention due to their low energy consumption and stability in the presence of toxic gases. However, the development of sensing characteristics at room temperature is still a pri
Externí odkaz:
https://doaj.org/article/afcc89c6df18461e9ef77145c1d2b4d3
Autor:
Jeechan Yoon, Bolim You, Yuna Kim, Jina Bak, Mino Yang, Jihyang Park, Myung Gwan Hahm, Moonsang Lee
Publikováno v:
ACS Applied Materials & Interfaces. 15:18463-18472
Autor:
Ravi K. Biroju, Patrick Harrison, Wolfgang Theis, Neil V. Rees, Rahul Sharma, Tharangattu N. Narayanan, Myung Gwan Hahm
Publikováno v:
ACS Applied Nano Materials. 4:13140-13148
Publikováno v:
Nanomaterials, Vol 10, Iss 9, p 1862 (2020)
The synthesis of controllable hollow graphitic architectures can engender revolutionary changes in nanotechnology. Here, we present the synthesis, processing, and possible applications of low aspect ratio hollow graphitic nanoscale architectures that
Externí odkaz:
https://doaj.org/article/ae567d3cb0974b948c1466bf74c8e3ef
Autor:
Moonsang Lee, Chang Wan Ahn, Thi Kim Oanh Vu, Hyun Uk Lee, Yesul Jeong, Myung Gwan Hahm, Eun Kyu Kim, Sungsoo Park
Publikováno v:
Nanomaterials, Vol 10, Iss 2, p 297 (2020)
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current−voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large
Externí odkaz:
https://doaj.org/article/2a20fe14036e4be68242e38cfed85611