Zobrazeno 1 - 10
of 620
pro vyhledávání: '"Myronov, M"'
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magne
Externí odkaz:
http://arxiv.org/abs/1804.04674
Publikováno v:
J. Phys.: Condens. Matter, 30,09LT01 (2018)
We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer. Additionally,
Externí odkaz:
http://arxiv.org/abs/1802.05205
We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibi
Externí odkaz:
http://arxiv.org/abs/1704.02879
Autor:
Herling, F., Morrison, C., Knox, C. S., Zhang, S., Newell, O., Myronov, M., Linfield, E. H., Marrows, C. H.
Publikováno v:
Phys. Rev. B 95, 155307 (2017)
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobili
Externí odkaz:
http://arxiv.org/abs/1610.09749
Autor:
Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., Mauskopf, P. D.
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the si
Externí odkaz:
http://arxiv.org/abs/1603.03309
Publikováno v:
Phys. Rev. B 92, 161405(R) (2015)
Recent study of a high-mobility 2D hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal. In the present study we demonstrate that the ani
Externí odkaz:
http://arxiv.org/abs/1511.05168
Publikováno v:
Phys. Rev. B 91, 201301(R) (2015)
We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane fie
Externí odkaz:
http://arxiv.org/abs/1511.05167
Publikováno v:
Phys. Rev. B 91, 241303(R) (2015)
We report on an observation of a fractional quantum Hall effect in an ultra-high quality two-dimensional hole gas hosted in a strained Ge quantum well. The Hall resistance reveals precisely quantized plateaus and vanishing longitudinal resistance at
Externí odkaz:
http://arxiv.org/abs/1511.05164
Autor:
Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prunnila, M., Prest, M. J., Sudiwala, R. V., Whall, T. E., Mauskopf, P. D.
Publikováno v:
Brien et al., Applied Physics Letters, 105, 043509 (2014)
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts bet
Externí odkaz:
http://arxiv.org/abs/1407.2113