Výsledky vyhledávání - "Myriam Assous"

POPSTAR: a Robust Modular Optical NoC Architecture for Chiplet-based 3D Integrated Systems

Autor: Myriam Assous, Benoit Charbonnier, Stephane Malhouitre, Pascal Vivet, Jean Charbonnier, Denis Dutoit, Yvain Thonnart, Ayse K. Coskun, Pierre Tissier, Aditya Narayan, Damien Saint-Patrice, Christian Bernard, David Coriat, Stephane Bernabe, Cesar Fuguet

Publikováno v: 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE)
2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), Mar 2020, Grenoble, France. pp.1456-1461, ⟨10.23919/DATE48585.2020.9116214⟩
DATE 2020-Design, Automation & Test in Europe Conference & Exhibition
DATE 2020-Design, Automation & Test in Europe Conference & Exhibition, Mar 2020, Grenoble, France. pp.1456-1461, ⟨10.23919/DATE48585.2020.9116214⟩
DATE

International audience; Silicon photonics technology is now gaining maturity with increasing levels of design complexity from devicesto large photonic integrated circuits. Close integration of control electronics with 3D assembly of photonics and CMO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a9a59fe45846bc31b16019d3b533b5e
https://hal-cea.archives-ouvertes.fr/cea-03471376

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Intermetallic Compound and Void Kinetics Extraction From Resistance Evolution in Copper Pillars During Electromigration Stress Tests

Autor: Myriam Assous, S. Simic, A. Plihon, C. Hartler, Jean Charbonnier, Jörg Siegert, Werner Grogger, Stefan Mitsche, Franz Schrank, Stephane Moreau, E. Chery

Publikováno v: IEEE Transactions on Device and Materials Reliability. 18:313-320

Die-to-wafer interconnections such as copper pillars play a vital role in order to enable 3-D integration. This interconnection type allows increasing the density of interconnects but the occurrence of defects, especially intermetallic compounds (IMC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17753b5d349c7c98ddb9fc1f0a0580c9
https://doi.org/10.1109/tdmr.2018.2834568

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Ultra Wide Micro Bumps Interconnection Matrix for High Energy Particle Detection: Process and Assembly

Autor: Jean Charbonnier, Pierre Tissier, R. Coquand, Gabriel Pares, Thierry Mourier, Sophie Verrun, R. Franiatte, Stephane Minoret, F. Allain, Mehmet Bicer, Myriam Assous, C. Ribiere

Publikováno v: 69th Electronic Components and Technology Conference
69th Electronic Components and Technology Conference, May 2019, Las Vegas, United States. pp.1622-1628, ⟨10.1109/ECTC.2019.00249⟩

International audience; Micro pillars and micro bumps interconnections are considered as mature technology for 3-D integration and chip stacking. However, in the framework of high-energy particles detection as ATLAS Large Hadron Collider new tracker

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::112192c5ae8aee2a47a8c2ab0b5895a9
https://hal.archives-ouvertes.fr/hal-02475226

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3D Si interposer & WLP for small power devices for harsh conditions

Autor: Myriam Assous, Stephane Moreau, Jean Charbonnier, Jörg Siegert, Maxime Argoud, N. David, C. Hartler, Nacima Allouti, Ewald Wachmann, A. Plihon, C. Brunet-Manquat

Publikováno v: 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC).

As electronic power systems follow the general trend of miniaturization and functional density [1], this study targets reliable and low cost 3D heterogeneous integration technology using Through Silicon Vias (TSV) and Wafer Level Packaging (WLP) for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20d4d6db4b17f9e310ced5328dfe34dc
https://doi.org/10.1109/eptc.2017.8277576

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3D integration for power MOS H bridge power application

Autor: Myriam Assous, C. Brunet Manquat, T. Hilt, A. Plihon, C. Hartler, Thierry Mourier, H. Gruber, Jennifer Guillaume, Jean Charbonnier, J. P. Bally, Franz Schrank, A. Hassaine, R. Franiatte, K. Pressel, Jörg Siegert

Publikováno v: 2016 6th Electronic System-Integration Technology Conference (ESTC).

Electronic power systems follow the general trend of miniaturization and functional density. 3D technologies provide an interesting response if adapted to power specifications. In the framework of the ENIAC JU funded project Enhanced Power Pilot Line

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04e305b3f1bb1fc63f086ccda68b759f
https://doi.org/10.1109/estc.2016.7764678

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Full Integration and Electrical Characterization of 3D Silicon Interposer Demonstrator Incorporating High Density TSVs and Interconnects

Autor: Kei Murayama, Robert Cuchet, Gilles Simon, Mitsuhiro Aizawa, Masahiro Sunohara, H. Feldis, Jean Charbonnier, Myriam Assous, Jean-Philippe Bally, Mitsutoshi Higashi, Ken Miyairi

Publikováno v: International Symposium on Microelectronics. 2012:000984-000990

Silicon interposers with TSVs appear to open new possibilities thanks to high wiring density interconnections and improved electrical performances given by shorter interconnections from die to die and also from die to substrate. Silicon interposers a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73ac4947910caa691ab8377c513c6e99
https://doi.org/10.4071/isom-2012-wp63

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Warpage control of silicon interposer for 2.5D package application

Autor: Myriam Assous, Mitsutoshi Higashi, Jean-Philippe Bally, Kenichi Mori, Ken Miyairi, Mitsuhiro Aizawa, Jean Charbonnier, Masahiro Sunohara, Gilles Simon, Koji Hara, Kei Murayama

Publikováno v: 2013 IEEE 63rd Electronic Components and Technology Conference.

In order to achieve high speed transmission and large volume data processing, large size silicon-interposer has been required. Warpage caused by the CTE mismatch between a large silicon-interposer and an organic substrate is the most significant prob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1956a0bc6579b1406c5a3ca7b1a9550
https://doi.org/10.1109/ectc.2013.6575677

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High density 3D silicon interposer technology development and electrical characterization for high end applications

Autor: Nathalie Bernard-Henriques, Jean Charbonnier, Rachid Hida, H. Feldis, Mitsutoshi Higashi, Nicole Bouzaida, Ken Miyairi, Masahiro Sunohara, Robert Cuchet, Jean-Philippe Bally, Myriam Assous, Thierry Mourier, Gilles Simon

Publikováno v: 2012 4th Electronic System-Integration Technology Conference.

As standard organic substrate packages and wire bonding are reaching their limits in term of wiring density and integration capacity, silicon interposer approach combined with 3D integration technologies opens new possibilities in advanced packaging.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cd49fa8bd85631fce66c3affbbbfff8
https://doi.org/10.1109/estc.2012.6542156

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First integration of Cu TSV using die-to-wafer direct bonding and planarization

Autor: Patrick Leduc, Sophie Verrun, Laurent Bally, Marc Zussy, David Bouchu, Thomas Signamarcheix, Maxime Rousseau, Alexis Farcy, Lea Di Cioccio, Antonio Roman, Lionel Cadix, Nicolas Sillon, Myriam Assous

Publikováno v: 3DIC

Copper-filled Through-Si Vias (TSV) with diameters from 2 µm to 5 µm have been integrated in a die-to-wafer stack combining direct bonding and a planarization technique. TSVs were processed on chip backside after oxide bonding and substrate thinnin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38e849ed707b283e9445a6688227f155
https://doi.org/10.1109/3dic.2009.5306602

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An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling

Autor: Laurent Clavelier, Lea Di Cioccio, Myriam Assous, Jerome Dechamp, Thomas Signamarcheix, Patrick Leduc, Rachid Taibi, Laurent Vandroux, Laurent Bally, Marc Zussy, Sophie Verrun, Francois de Crecy, Laurent-Luc Chapelon, D. Bouchu, Pierric Gueguen

Publikováno v: 3DIC

An innovative die to wafer stacking is proposed for 3D devices. Known good dices are bonded on a processed wafer thanks to direct bonding. Oxide layers or patterned oxide/copper layers are used as the bonding medium. After a first thinning, a low str

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::075f74f34c4fa4f5367c59879f00ad36
https://doi.org/10.1109/3dic.2009.5306534

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