Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Myra Boenke"'
Autor:
Arvind Kumar, Xiaowei Tian, Ned Cahoon, Hua Wang, Dawn Wang, Gabriel M. Rebeiz, Alvin J. Joseph, Chaojiang Li, Myra Boenke
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
45nm RFSOI NFET has similar F T /F max as high performance 130nm SiGe NPN and they are both potentially suitable for Ka Band FEM applications. In this paper, we evaluated the Ka band LNA, SPDT, and PA based on both processes. A 28GHz LNA designed wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa318d541d1f62eb01c0ac38f798c6e3
https://doi.org/10.1109/icsict.2018.8565660
https://doi.org/10.1109/icsict.2018.8565660
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
In this paper we first discuss about how to select the device type to get best LNA NF for applications ranging from sub-6GHz to 5G mm-Wave Ka-band. A prototype Ka-band fully integrated LNA is designed and fabricated in 45nm CMOS SOI process with a ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d3774a0c26776e7280c9c23e6cb8ae6
https://doi.org/10.1109/mwsym.2018.8439132
https://doi.org/10.1109/mwsym.2018.8439132
Publikováno v:
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
In this paper, we first present the Ron versus frequency for different channel length devices, it shows the Ron advantages in narrow channel device in mm-Wave frequency range. Then investigated the single-pole double-throw (SPDT) design with NFET or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96244dfa28574e4f75ae2409c39ab0d8
https://doi.org/10.1109/sirf.2018.8304213
https://doi.org/10.1109/sirf.2018.8304213
Autor:
Hua Wang, Myra Boenke, Ned Cahoon, Taiyun Chi, Alvin J. Joseph, Anirban Bandyopadhyay, Chaojiang Li, Min Wang, Arvind Kumar, Dawn Wang
Publikováno v:
ASICON
In this paper, we first introduce the RF performance of Globalfoundries 45RFSOI process. NFET F t > 290GHz and F max >380GHz. Then we present several mm-Wave circuit block designs, i.e., Switch, Power Amplifier, and LNA, based on 45RFSOI process for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db04f15fb0c161123af000fd1f689ef
https://doi.org/10.1109/asicon.2017.8252651
https://doi.org/10.1109/asicon.2017.8252651
Autor:
Hua Wang, Arvind Kumar, Anirban Bandyopadhyay, Chaojiang Li, Myra Boenke, Ned Cahoon, Taiyun Chi, Alvin J. Joseph, Min Wang
Publikováno v:
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS).
This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high-performance energy-efficient 5G mm-Wave transceiver front-ends. With a 2.9V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79739477a30dc0366873a09dde5a5feb
https://doi.org/10.1109/wmcas.2017.8070708
https://doi.org/10.1109/wmcas.2017.8070708
Publikováno v:
2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
In this paper, we discuss a DC-20GHz single-pole double-throw (SPDT) transmit/receive switch (T/R switch) design in 45nm SOI process. This circuit is dedicated to fully integrated CMOS RF front end modules for X/Ku band satellite communication applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f904f5afeacba6413f86ae6b42b113c4
https://doi.org/10.1109/sirf.2017.7874370
https://doi.org/10.1109/sirf.2017.7874370
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we first analyze an LNA core, cascode structure cut off frequency and power gain relationship with device parameters. Then we discuss the LNA design differences between FET LNA and SiGe LNA during design optimization. SOI floating body
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44a3f239fa2de3989919ef3d6f61d974
https://doi.org/10.1109/icsict.2016.7998860
https://doi.org/10.1109/icsict.2016.7998860
Autor:
Myra Boenke, Dawn Wang, Xiaoxia Wang, Randy Wolf, Hanyi Ding, Vibhor Jain, Chaojiang Li, Alvin J. Joseph
Publikováno v:
ASICON
In this paper, we present 2.4/5.5 GHz LNAs with SPDT Switch for WiFi Front-End Modulate Integrated Circuit (FEM IC) based on high resistivity substrate 0.35um SiGe BiCMOS process. For the 2.4GHz LNA, the bias circuit's effect on the nonlinearity is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86cd1ab86c453d2bf1f5d82ddf936690
https://doi.org/10.1109/asicon.2015.7516888
https://doi.org/10.1109/asicon.2015.7516888
Autor:
Michael J. Zierak, Natalie B. Feilchenfeld, Randy L. Wolf, Dawn Wang, Ted Letavic, Myra Boenke, Hanyi Ding, Chaojiang Li
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we introduce an isolated RF LDMOS NFET is for RF Power Amplifier (PA) and power management applications. The RF LDMOS NFET has demonstrated a drain-source turn-on resistance (R ds,on ) of 1.45ohm-mm, a cutoff frequency (Ft) greater tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2057252fdf237930e331e1b778c86b65
https://doi.org/10.1109/icsict.2014.7021359
https://doi.org/10.1109/icsict.2014.7021359
Publikováno v:
ASICON
A System-On-Chip (SOC) demonstrator integrating a low-noise IEEE 802.15.4 Transmitter and a DC-DC converter on a 0.18um High Voltage (HV) and RF CMOS process is presented in this paper. Noise isolation performance is critical to success of this type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::538962aa0a03ff833c93b3c7b219a194
https://doi.org/10.1109/asicon.2013.6811896
https://doi.org/10.1109/asicon.2013.6811896