Zobrazeno 1 - 10
of 192
pro vyhledávání: '"Myounggon Kang"'
Autor:
Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
Publikováno v:
IEEE Access, Vol 12, Pp 23881-23886 (2024)
Accurate current-voltage (I-V) modeling based on the Berkeley short-channel insulated-gate field-effect transistor model (BSIM) is pivotal for integrated circuit simulation. However, the current BSIM model does not support a buried-channel-array tran
Externí odkaz:
https://doaj.org/article/be40799b6d1e4e5da92ee9cb9d41dd5d
Publikováno v:
Nano Convergence, Vol 10, Iss 1, Pp 1-15 (2023)
Abstract Memristors, owing to their uncomplicated structure and resemblance to biological synapses, are predicted to see increased usage in the domain of artificial intelligence. Additionally, to augment the capacity for multilayer data storage in hi
Externí odkaz:
https://doaj.org/article/5c1a18c6a0ef48578ffcd1ae1ff54432
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 6, Iss , Pp 100090- (2023)
In this study, a floating-gate field-effect transistor (FGFET) structure is proposed and verified through simulations. Current memory devices often rely on the von Neumann architecture which suffers from von Neumann bottleneck. The proposed FGFET is
Externí odkaz:
https://doaj.org/article/18cad5cb088548bd82651c68c7f8e590
Publikováno v:
Micromachines, Vol 15, Iss 4, p 450 (2024)
Although the von Neumann architecture-based computing system has been used for a long time, its limitations in data processing, energy consumption, etc. have led to research on various devices and circuit systems suitable for logic-in-memory (LiM) co
Externí odkaz:
https://doaj.org/article/d70ca91143ef44a5a7193bf540352c9e
Autor:
Sueyeon Kim, Insoo Choi, Sangki Cho, Myounggon Kang, Seungjae Baik, Changho Ra, Jongwook Jeon
Publikováno v:
IEEE Access, Vol 11, Pp 97778-97785 (2023)
The high data throughput and high energy efficiency required recently are increasingly difficult to implement due to the von Neumann bottleneck. As a way to overcome this, Logic-in-Memory (LiM) technology has recently been receiving a lot of attentio
Externí odkaz:
https://doaj.org/article/3e4bccd0e0ce4ec099323c37c01f14ea
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-14 (2022)
Abstract For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance valu
Externí odkaz:
https://doaj.org/article/0927fb5a96514e1d888a8fc785b0cb40
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-9 (2022)
Abstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRA
Externí odkaz:
https://doaj.org/article/7a3d677237d544b3b2defc31b0d540b6
Publikováno v:
AIP Advances, Vol 13, Iss 4, Pp 045211-045211-13 (2023)
Due to the limitations of the currently widely used von Neumann architecture-based computing system, research on various devices and circuit systems suitable for logic-in-memory computing applications has been conducted. In this work, the silicon-bas
Externí odkaz:
https://doaj.org/article/d37e9b9157eb4a47916a149296d6a4fa
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2859 (2023)
In this study, we investigate the electrical properties of ITO/ZrOx/TaN RRAM devices for neuromorphic computing applications. The thickness and material composition of the device are analyzed using transmission electron microscopy. Additionally, the
Externí odkaz:
https://doaj.org/article/85d1425d85b34dd6846dce072015eff4
Publikováno v:
Nanomaterials, Vol 13, Iss 18, p 2603 (2023)
In this study, we fabricate a Pt/TiN/SnOx/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO2, acts as an oxygen vacancy reservoir, aid
Externí odkaz:
https://doaj.org/article/b5e18a4065044ffea31074394c4975e1