Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Myoung sun Lee"'
Autor:
Kim Kyeong Han, Myoung sun Lee, Kim Jong Uk, Beom-Yong Song, Oh yongtaek, Jong Min Jeong, Tae-Han Yook
Publikováno v:
Society of Preventive Korean Medicine. 22:61-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadd96e972d0f89b4174b185b2377736
https://doi.org/10.25153/spkom.2018.22.3.006
https://doi.org/10.25153/spkom.2018.22.3.006
Autor:
Myoung-Sun Lee1 lmsms14@naver.com, Seon-Ok Lee1 lso4595@naver.com, Kyu-Ri Kim2 oknice79@gmail.com, Hyo-Jeong Lee1 strong79@khu.ac.kr
Publikováno v:
International Journal of Molecular Sciences. Feb2017, Vol. 18 Issue 2, p325. 13p.
Autor:
Myoung-Sun Lee1 lmsms14@naver.com, Seon-Ok Lee1 lso4595@naver.com, Sung-Hoon Kim1 sungkim7@khu.ac.kr, Eun-Ok Lee1 leook@khu.ac.kr, Hyo-Jeong Lee1 strong79@khu.ac.kr
Publikováno v:
International Journal of Molecular Sciences. Jul2016, Vol. 17 Issue 7, p1066. 12p. 1 Diagram, 5 Graphs.
Publikováno v:
Herbal Formula Science. 24:367-376
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f29e9bec5aa560aa3068035171176d
https://doi.org/10.14374/hfs.2016.24.4.367
https://doi.org/10.14374/hfs.2016.24.4.367
Publikováno v:
IEEE Transactions on Electron Devices. 62:569-573
We present a novel silicon-based type of charge-trap memory using Al/HfO2/Al2O3/Si3N4/Si structure mimicking memory functions in a biological synapse. The quantity of the trapped charge in the proposed Al2O3/HfO2/Si3N4 stack is estimated by measuring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c87b344091303089a1af2434fccd9f71
https://doi.org/10.1109/ted.2014.2378758
https://doi.org/10.1109/ted.2014.2378758
Publikováno v:
International Journal of Molecular Sciences; Volume 18; Issue 2; Pages: 325
International Journal of Molecular Sciences
International Journal of Molecular Sciences, Vol 18, Iss 2, p 325 (2017)
International Journal of Molecular Sciences
International Journal of Molecular Sciences, Vol 18, Iss 2, p 325 (2017)
Hypoxia enhances cancer development in a solid tumor. Hypoxia-inducible factor-1 α (HIF-1α) is a transcription factor that is dominantly expressed under hypoxia in solid tumor cells and is a key factor that regulates tumor. HIF-1α regulates severa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e07b50721ee1c128c64e0c31c907256
Publikováno v:
International Journal of Molecular Sciences, Vol 17, Iss 7, p 1066 (2016)
International Journal of Molecular Sciences; Volume 17; Issue 7; Pages: 1066
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES(17): 7
International Journal of Molecular Sciences
International Journal of Molecular Sciences; Volume 17; Issue 7; Pages: 1066
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES(17): 7
International Journal of Molecular Sciences
Lambertianic acid (LA) is known to have anti-allergic and antibacterial effects. However, the anticancer activities and mechanism of action of LA have not been investigated. Therefore, the anticancer effects and mechanism of LA are investigated in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4bf2c8029ced2663a0d4e391f82807b
http://www.mdpi.com/1422-0067/17/7/1066
http://www.mdpi.com/1422-0067/17/7/1066
Publikováno v:
BMC Cancer
BMC CANCER(16)
BMC CANCER(16)
Background Hypoxia is a typical character of locally advanced solid tumours. The transcription factor hypoxia-inducible factor 1α (HIF-1α) is the main regulator under the hypoxic environment. HIF-1α regulates various genes to enhance tumour progre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e473f717fc97305049784968a94d307
https://pubmed.ncbi.nlm.nih.gov/27581969
https://pubmed.ncbi.nlm.nih.gov/27581969
Composition of fat in HFD. (PDF 7 kb)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ec24331af67fc4c09c111a3c176b6bf
Autor:
Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park, Myoung-Sun Lee, Jong-Ho Lee, Sangsik Park, Sung-Min Joe
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 12:360-369
The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91f867ec28594d4457a8c4967d3b3bbd
https://doi.org/10.5573/jsts.2012.12.3.360
https://doi.org/10.5573/jsts.2012.12.3.360