Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Myoung Kwan Cho"'
Publikováno v:
Journal of Applied Physics. 92:3724-3729
A compact model of gate current due to Fowler–Nordheim tunneling is presented, which agrees closely with the self-consistent numerical analyses of the surface inversion region of metal–oxide–semiconductor field-effect transistors (MOSFETs). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79051e0ae55f7b449577fa7dbc85c2ac
https://doi.org/10.1063/1.1504173
https://doi.org/10.1063/1.1504173
Publikováno v:
Current Applied Physics. 1:505-508
Tri-crystalline silicon wafers have been used for fabrication of buried contact solar cells. Optical properties and microstructures after texturing in KOH solution have been studied and compared with those of multi-crystalline silicon wafers. The tex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db2aad9a9152f294e9f386cc4085e98
https://doi.org/10.1016/s1567-1739(01)00063-3
https://doi.org/10.1016/s1567-1739(01)00063-3
Autor:
Hae chang Yang, Sukkwang Park, Gi-Hyun Bae, Sangjo Lee, Milim Park, Yunbong Lee, Min Sang Park, Pyunghwa Kim, Jiyul Park, Sungjo Park, Sunghoon Cho, Byoungjun Park, Sungwook Park, Myoung Kwan Cho, Kun-Ok Ahn
Publikováno v:
2012 4th IEEE International Memory Workshop.
In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e6b8b01da4ba7303410b8b3e7f4e69
https://doi.org/10.1109/imw.2012.6213622
https://doi.org/10.1109/imw.2012.6213622
Autor:
Sangjo Lee, Sunghoon Cho, Milim Park, Pyunghwa Kim, Kun-Ok Ahn, Myoung Kwan Cho, Sungwook Park, Gi-Hyun Bae, Hyunyoung Shim, YeonJoo Jeong, SungPyo Lee
Publikováno v:
2012 4th IEEE International Memory Workshop.
In this paper, the challenges of NAND flash memory devices with E/W cycling characteristics are discussed. The large VTH shift in 2y-nm technology is investigated with various causes such as air-gap, poly2 valley plug gap-fill and string current. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dadc7e9a024057156ea692d6b5236c44
https://doi.org/10.1109/imw.2012.6213619
https://doi.org/10.1109/imw.2012.6213619
Autor:
Ye Seok Yang, Sukkwang Park, Kun-Ok Ahn, Byoungjun Park, Dong Wook Lee, Sungwook Park, Myoung Kwan Cho, Byung Woo Kang, Sunghoon Cho
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
As the NAND flash market demand for larger capacity with low cost increases, the feature-size scaling and multi-level per bit have been developed. In this paper, we present the newly adopted operation algorithms and their results such as intelligent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6d438315bf13353954c41d54a922e0f
https://doi.org/10.1109/imw.2011.5873234
https://doi.org/10.1109/imw.2011.5873234
Autor:
Joo-Seog Park, Kun-Ok Ahn, Sukkwang Park, Yo-Hwan Koh, Pyunghwa Kim, B. D. Jo, YeonJoo Jeong, Myoung Kwan Cho
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44a1847a0231a1add46ea90aa5a65f26
https://doi.org/10.7567/ssdm.2010.e-2-3
https://doi.org/10.7567/ssdm.2010.e-2-3
Autor:
DaeHwan Yun, Hae chang Yang, Yunbong Lee, Ji Yul Park, Kun-Ok Ahn, YeonJoo Jeong, Yo-Hwan Koh, Myoung Kwan Cho, Byoungjun Park, Pyoung Hwa Kim
Publikováno v:
2010 IEEE International Memory Workshop.
This paper investigates the challenges and difficulties of TLC cell geometry and process beyond 20nm NAND technology from the viewpoint of programmed V th level, new HCI disturbance and charge loss in the highest programmed level.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb50229b49bdf726d12609a4dc6913c
https://doi.org/10.1109/imw.2010.5488388
https://doi.org/10.1109/imw.2010.5488388
Autor:
Kun-Ok Ahn, Dong-Kyu Lee, Seokwon Cho, Ho Seok Lee, Sukkwang Park, Chonga Hong, Yo-Hwan Koh, YeonJoo Jeong, Milim Park, Myoung Kwan Cho
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
In this paper, we present the impact of hot carrier injection (HCI) during programming operation in NAND Flash, and describe how HCI degrades reliability characteristics. In order to understand reliability degradation induced by HCI, we evaluated the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e516333029096e0828f93f2f5818285b
https://doi.org/10.1109/irps.2010.5488692
https://doi.org/10.1109/irps.2010.5488692
Autor:
Joong-Seob Yang, S. Jung, Juyeab Lee, Kun-Ok Ahn, Myoung Kwan Cho, Sung-Kye Park, Yo-Hwan Koh, Ho-Seok Lee, Sang-Hoon Cho, K. Jin, Milim Park, J. An
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c843402b5777b8785097390d4625542
https://doi.org/10.7567/ssdm.2009.g-4-2
https://doi.org/10.7567/ssdm.2009.g-4-2
Autor:
Suk-Ki Kim, Yo-Hwan Koh, Kun-Ok Ahn, Y. Yang, Dong-Duk Lee, S. W. Seo, P. Kim, Myoung Kwan Cho, Hong-Seon Yang, Ho Seok Lee, S. M. Yi, H. Oh
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f743942304132bffce69fffeb48ff9c0
https://doi.org/10.7567/ssdm.2009.g-4-3
https://doi.org/10.7567/ssdm.2009.g-4-3