Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Myoung Chul Chun"'
Autor:
Hee Tae Lee, Jung Gon Kim, Hee Won Shin, Jang Yul Kim, Mi Seon Park, Myoung Chul Chun, Yeon Suk Jang, Hee Jun Lee, Si Hyun Lee, Tai Hee Eun, Won-Jae Lee, Im Gyu Yeo
Publikováno v:
Materials Science Forum. :43-46
The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd6d67756edb2153c1b1cdc57f20c68
https://doi.org/10.4028/www.scientific.net/msf.821-823.43
https://doi.org/10.4028/www.scientific.net/msf.821-823.43
Autor:
Won-Jae Lee, Tai-Hee Eun, Hee Tae Lee, Jang-Yul Kim, Jung-Gon Kim, Yeon-Suk Jang, Si-Hyun Lee, Hee-Jun Lee, Hee Won Shin, Im-Gyu Yeo, Mi-Seon Park, Myoung-Chul Chun
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 25:51-55
The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f767d88918d2405d4af3f0357dcc4cc
https://doi.org/10.6111/jkcgct.2015.25.2.051
https://doi.org/10.6111/jkcgct.2015.25.2.051
Autor:
Park Jong Hwi, Jang Yul Kim, Im Gyu Yeo, Seung Seok Lee, Myoung Chul Chun, Il Soo Kim, Tai Hee Eun, Tae Kyoung Yang, Won Jae Lee
Publikováno v:
Materials Science Forum. :17-20
The present research was focused to investigate various process parameters influenced on the large 4H-SiC crystal growth on a 6H-SiC seed by PVT method. The crucible diameter along horizontal axial direction and inserted graphite ring was modified to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a589c4ed7675dc4a5ade8988dae6b4
https://doi.org/10.4028/www.scientific.net/msf.717-720.17
https://doi.org/10.4028/www.scientific.net/msf.717-720.17
Autor:
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio
ICSCRM 2015Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Autor:
Didier Chaussende, Gabriel Ferro
Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan