Výsledky vyhledávání - "Mynbaeva, Marina"

Akademický článek

Estimation of point defects content in bulk GaN

Autor: Dementeva, Ekaterina V., Orekhova, Kseniia N., Mynbaeva, Marina G., Zamoryanskaya, Maria V.

Publikováno v: In Journal of Luminescence May 2022 245

Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup

Autor: Lebedev, Sergey, Priobrazhenskii, Sergei, Plotnikov, Andrey, Mynbaeva, Marina, Lebedev, Alexander

An approach is presented to optimizing the growth of graphene on silicon carbide (SiC) substrates by using numerical simulation methods. The presented models in axisymmetric approximation show good convergence with experimental results and allow stud

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Self-organization of the structure of porous silicon carbide under external influences

Autor: Mynbaeva, Marina, Lebedev, Sergey

This paper presents the results of a study of the effect of external influences on the structure and phase composition of porous SiC layers obtained by anodization. It is shown how carrying out of standard technological operations makes it possible t

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Transfer of 3C-SiC heteroepitaxial layers grown on silicon to а 6H-SiC substrate by direct bonding technique

Autor: Amelchuk, Dmitriy, Mynbaeva, Marina, Smirnov, Alexander, Davydov, Valery, Lebedev, Sergey, Lebedev, Alexander

This paper reports on the development of direct bonding of 3C-SiC epitaxial layers grown by chemical vapor deposition on silicon substrates and 6H-SiC single crystal wafers. It has been found that the bonding temperature is a critical parameter to ob

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