Mechanism of Annealing of VO Defects in n-Si Under Pulse Electron Irradiation at High-Temperatures

Autor: Kraitchinskii, A. M., Mykola Kras'ko, Kolosiuk, A. G., Petrunya, R. V., Povarchuk, V. Y., Voytovych, V. V., Neimash, V. B., Makara, V. A., Rudenko, R. M.

Publikováno v: Ukrainian Journal of Physics; Vol. 56 No. 9 (2011); 922
Український фізичний журнал; Том 56 № 9 (2011); 922
Scopus-Elsevier

We study the kinetics of accumulation of vacancy-oxygen (VO) complexes in Czochralski-grown (Cz) n-Si, at various intensities of pulse 1 MeV electron radiation at temperatures higher than the temperature of the onset of the thermal annealing of VO (T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0b7cea1c23d5c98c7e145cfc8e263c0d
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022028

Influence of A- and E-centers on the lifetime of nonequilibrium charge carriers in γ-irradiated n-Si

Autor: Mykola Kras'ko, Neimash, V. B., Kraitchinskii, A. M., Kolosyuk, A. G., Kabaldin, O. M.

Publikováno v: Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::250bfc46a36c706e7d6c9002372cd19a
http://www.scopus.com/inward/record.url?eid=2-s2.0-54749118549&partnerID=MN8TOARS

Influence of γ-irradiation on initial magnetic permeability of amorphous and nanocrystalline Fe-Si-B-based alloys

Autor: Povarchuk, V. Y., Nosenko, V. K., Kraitchinskii, A. M., Neimash, V. B., Mykola Kras'ko, Maslov, V. V.

Publikováno v: Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::08ffe900e614992618a944022ff0c294
http://www.scopus.com/inward/record.url?eid=2-s2.0-84858646792&partnerID=MN8TOARS