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pro vyhledávání: '"Mykhashchuk Iu. S."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 50-53 (2010)
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and
Externí odkaz:
https://doaj.org/article/6edc77f8daeb492589dc36f8a03f90de
