Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Mykhailo Sytnyk"'
Autor:
Mykhailo Sytnyk, Marie Jakešová, Monika Litviňuková, Oleksandr Mashkov, Dominik Kriegner, Julian Stangl, Jana Nebesářová, Frank W. Fecher, Wolfgang Schöfberger, Niyazi Serdar Sariciftci, Rainer Schindl, Wolfgang Heiss, Eric Daniel Głowacki
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-11 (2017)
Nanomaterials that form a bioelectronic interface with cells are fascinating tools for controlling cellular behavior. Here, the authors photostimulate single cells with spiky assemblies of semiconducting quinacridone nanocrystals, whose nanoscale nee
Externí odkaz:
https://doaj.org/article/aeb70416bf4b4d17ba04e228c0ae8bf9
Autor:
Mohamad I. Nugraha, Hiroyuki Matsui, Satria Z. Bisri, Mykhailo Sytnyk, Wolfgang Heiss, Maria A. Loi, Jun Takeya
Publikováno v:
APL Materials, Vol 4, Iss 11, Pp 116105-116105-8 (2016)
We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical
Externí odkaz:
https://doaj.org/article/f8cf4a6d831e43bb9ad8a43c358fb56d
Autor:
Jiyun Zhang, Bowen Liu, Ziyi Liu, Jianchang Wu, Simon Arnold, Hongyang Shi, Tobias Osterrieder, Jens Hauch, Zhenni Wu, Junsheng Luo, Jerrit Wagner, Christian G. Berger, Tobias Stubhan, Frederik Schmitt, Kaicheng Zhang, Mykhailo Sytnyk, Thomas Heumueller, Carolin M. Sutter-Fella, Ian Marius Peters, Yicheng Zhao, Christoph J. Brabec
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59695a9380ae18cfaa0694d200222e4
https://doi.org/10.2139/ssrn.4309089
https://doi.org/10.2139/ssrn.4309089
Autor:
Hany A. Afify, Mykhailo Sytnyk, Viktor Rehm, Anastasiia Barabash, Oleksandr Mashkov, Andres Osvet, Valentine V. Volobuev, Jędrzej Korczak, Andrzej Szczerbakow, Tomasz Story, Klaus Götz, Tobias Unruh, Christoph Schüßlbauer, Dominik Thiel, Tobias Ullrich, Dirk M. Guldi, Christoph J. Brabec, Wolfgang Heiss
Publikováno v:
Advanced optical materials 10(11), 2200237-(2022). doi:10.1002/adom.202200237
High-quality epitaxial growth of oriented microcrystallites on a semiconductor substrate is demonstrated here for formamidinium lead bromide perovskite, by drop casting of precursor solutions in air. The microcrystallites exhibit green photoluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cda75637c95fb75ff1e9f0dc97f7d7d0
https://doi.org/10.1002/adom.202200237
https://doi.org/10.1002/adom.202200237
Autor:
Mykhailo Sytnyk, Bin Chen, Frédéric Laquai, Andrew H. Proppe, Wolfgang Heiss, Koen Bertens, Armin Sedighian Rasouli, Se-Woong Baek, Joao M. Pina, Olivier Ouellette, Edward H. Sargent, Maral Vafaie, Laxmi Kishore Sagar, F. Pelayo García de Arquer, Sjoerd Hoogland, Yajun Gao, James Z. Fan
Publikováno v:
Nano letters. 20(7)
Shortwave infrared colloidal quantum dots (SWIR-CQDs) are semiconductors capable of harvesting across the AM1.5G solar spectrum. Today's SWIR-CQD solar cells rely on spin-coating; however, these films exhibit cracking once thickness exceeds ∼500 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15ca1b3648568352223a613d5b4490ec
https://pubmed.ncbi.nlm.nih.gov/32543860
https://pubmed.ncbi.nlm.nih.gov/32543860
Autor:
Peter Wientjes, Christoph J. Brabec, Gebhard J. Matt, Thomas Fauster, Mykhailo Sytnyk, Daniel Niesner, Wolfgang Heiss, Ievgen Levchuk, Andres Osvet, Miroslaw Batentschuk, Shreetu Shrestha, Oskar Schuster
Publikováno v:
Nano letters 20(5), 3090-3097 (2020). doi:10.1021/acs.nanolett.9b05068
Despite the intense research on photovoltaic lead halide perovskites, reported optical properties as basic as the absorption onset and the optical band gap vary significantly. To unambiguously answer the question whether the discrepancies are a resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c40de5c5517e64ebbc944a1478754715
https://pubmed.ncbi.nlm.nih.gov/32283026
https://pubmed.ncbi.nlm.nih.gov/32283026
Autor:
Hany A. Afify, Mykhailo Sytnyk, Shuyu Zhou, Andres Osvet, Christoph J. Brabec, Jędrzej Korczak, Andrzej Szczerbakow, Tomasz Story, Wolfgang Heiss
Publikováno v:
Applied physics letters 119(23), 230501-(2021). doi:10.1063/5.0068665
Lead-chalcogenides and lead-halide-perovskites exhibit similar physical properties, which can be summarized as defect tolerant behavior. While the lead-chalcogenides have been pioneering materials in vapor phase epitaxy, metal-halide-perovskites offe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d47e082969f5ebbb154a4302223f3e25
https://doi.org/10.1063/5.0068665
https://doi.org/10.1063/5.0068665
Autor:
Baolin Zhao, Hany A. Afify, Marus Halik, Sandro Francesco Tedde, Wolfgang Heiss, Rainer Hock, Gebhard J. Matt, Sarah Deumel, Andreas Eigen, Albert These, Christoph J. Brabec, Mykhailo Sytnyk, Manuel Daum
Publikováno v:
Advanced functional materials 31(47), 2102713-(2021). doi:10.1002/adfm.202102713
Self‐healing of defects imposed by external stimuli such as high energy radiation is a possibility to sustain the operational lifetime of electronic devices such as radiation detectors. Cs3Bi2Br3I6 polycrystalline wafers are introduced here as nove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17c992b6397b215d1b80f8abcecd1e35
https://doi.org/10.1002/adfm.202102713
https://doi.org/10.1002/adfm.202102713
Autor:
Julian Stangl, Sergii Yakunin, Max Burian, Mykhailo Sytnyk, Lukas Ludescher, Niall A. Killilea, Wolfgang Schöfberger, Dominik Kriegner, Wolfgang Heiss, Rainer T. Lechner, Heiko Groiss, AmirAbbas YousefiAmin
Publikováno v:
ACS Nano
Epitaxial growth techniques enable nearly defect free heterostructures with coherent interfaces, which are of utmost importance for high performance electronic devices. While high-vacuum technology-based growth techniques are state-of-the art, here w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::944653d22f42421a7727c11d0be68ee8
https://doi.org/10.1021/acsnano.6b04721
https://doi.org/10.1021/acsnano.6b04721
Autor:
Adam K, Budniak, Niall A, Killilea, Szymon J, Zelewski, Mykhailo, Sytnyk, Yaron, Kauffmann, Yaron, Amouyal, Robert, Kudrawiec, Wolfgang, Heiss, Efrat, Lifshitz
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 16(1)
Layered semiconductors have attracted significant attention due to their diverse physical properties controlled by composition and the number of stacked layers. Herein, large crystals of the ternary layered semiconductor chromium thiophosphate (CrPS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::eb1776b588e4130b7db9e6411efc4cc0
https://pubmed.ncbi.nlm.nih.gov/31805222
https://pubmed.ncbi.nlm.nih.gov/31805222