Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Myers, Roberto"'
The anisotropic optical absorption edge of $\beta$-Ga$_2$O$_3$ follows a modified Beer-Lambert law having two effective absorption coefficients. The absorption coefficient of linearly polarized light reduces to the least absorbing direction beyond a
Externí odkaz:
http://arxiv.org/abs/2407.00190
ZnS is a brittle material but shows extraordinary plasticity during mechanical tests performed in complete darkness. This phenomenon is known as the photoplastic effect, whose underlying mechanisms have long been unclear. We study the impact of light
Externí odkaz:
http://arxiv.org/abs/2406.13044
Autor:
Montenegro, Alexandra Fonseca, Baan, Marzieh, Ghazisaeidi, Maryam, Grassman, Tyler J., Myers, Roberto C.
Scanning electron microscopy (SEM) based electron channeling contrast imaging (ECCI) is used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial interface between ZnS and GaP grown by molecular beam epitaxy (MBE). B
Externí odkaz:
http://arxiv.org/abs/2404.16714
Autor:
Adnan, Md Mohsinur Rahman, Verma, Darpan, Sturm, Chris, Schubert, Matthias, Myers, Roberto C.
Publikováno v:
Phys. Rev. Applied 21, 054059 (2024)
Due to its low symmetry, $\beta$-Ga$_{2}$O$_{3}$ exhibits a strongly anisotropic optical response. As a result, the absorption spectra change with the polarization state of the incoming photons. To understand this phenomenon, here we calculate the co
Externí odkaz:
http://arxiv.org/abs/2305.19431
Autor:
Verma, Darpan, Adnan, Md Mohsinur Rahman, Dhara, Sushovan, Sturm, Chris, Rajan, Siddharth, Myers, Roberto C.
Publikováno v:
Phys. Rev. Materials 7, L061601 (2023)
Polarization dependent photocurrent spectra are measured on a (001) $\beta$-Ga$_{2}$O$_{3}$ Schottky photodetector, where the linear polarization of light is rotated within the ab plane. Three spectral peaks at 4.92 eV, 5.15 eV, and 5.44 eV are obser
Externí odkaz:
http://arxiv.org/abs/2303.06231
We study the electronic properties of the glide set of dislocations in diamond from first principles using hybrid exchange correlation functionals and find that the atomic-scale dislocation core states give rise to a prototypical one-dimensional (1D)
Externí odkaz:
http://arxiv.org/abs/2210.12224
Autor:
Adnan, Md M., Verma, Darpan, Xia, Zhanbo, Kalarickal, Nidhin K., Rajan, Siddharth, Myers, Roberto C.
Publikováno v:
Phys. Rev. Applied 16, 034011 (2021)
$\beta-Ga_{2}O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wide bandgap. This provides a rare opportunity in the solid-state to
Externí odkaz:
http://arxiv.org/abs/2011.00375
Autor:
Joishi, Chandan, Xia, Zhanbo, Jamison, John S., Sohel, Shahadat H., Myers, Roberto C., Lodha, Saurabh, Rajan, Siddharth
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $\beta$-Ga$_2$O$_3$ layer
Externí odkaz:
http://arxiv.org/abs/2004.10440
Autor:
Verma, Darpan, Adnan, Md Mohsinur Rahman, Rahman, Mohammad Wahidur, Rajan, Siddharth, Myers, Roberto C.
The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broa
Externí odkaz:
http://arxiv.org/abs/2001.03583
Autor:
Jamison, John S., May, Brelon J., Deitz, Julia I., Chien, Szu-Chia, McComb, David W., Grassman, Tyler J., Windl, Wolfgang, Myers, Roberto C.
Publikováno v:
Cryst. Growth Des. 19, 4205-4211 (2019)
Here we demonstrate a new monoclinic iron oxide phase ({\mu}-Fe$_{2}$O$_{3}$), epitaxially stabilized by growth on (010) {\beta}-Ga$_{2}$O$_{3}$. Density functional theory (DFT) calculations find that the lattice parameters of freestanding {\mu}-Fe$_
Externí odkaz:
http://arxiv.org/abs/1901.04844