Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Myeongwon, Lee"'
Autor:
Yuhan Lee, Myeongwon Lee, Junhyeon Jo, Seokmin Lee, Jung-Woo Yoo, Taeyoung Choi, Andreas Heinrich, Donghun Lee
Publikováno v:
Current Applied Physics. 34:59-63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::060be53978d157ac3035f524b1e99d90
https://doi.org/10.1016/j.cap.2021.12.001
https://doi.org/10.1016/j.cap.2021.12.001
Autor:
Hyemi Na, Meng Qiang Li, Jeongbeom Cha, Sunkyu Kim, Haedam Jin, Dohun Baek, Mi Kyong Kim, Suhui Sim, Myeongwon Lee, Minjeong Kim, Jongchul Lim, Jaewon Lee, Min Kim
Publikováno v:
Applied Surface Science. 626:157209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee68546c6c16a27b677e0c638355c8e
https://doi.org/10.1016/j.apsusc.2023.157209
https://doi.org/10.1016/j.apsusc.2023.157209
Autor:
Lan-Anh T, Nguyen, Krishna P, Dhakal, Yuhan, Lee, Wooseon, Choi, Tuan Dung, Nguyen, Chengyun, Hong, Dinh Hoa, Luong, Young-Min, Kim, Jeongyong, Kim, Myeongwon, Lee, Taeyoung, Choi, Andreas J, Heinrich, Ji-Hee, Kim, Donghun, Lee, Dinh Loc, Duong, Young Hee, Lee
Publikováno v:
ACS nano. 15(12)
While valley polarization with strong Zeeman splitting is the most prominent characteristic of two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors under magnetic fields, enhancement of the Zeeman splitting has been demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3fdc3cab7c6c0ffd525011a404ae9658
https://pubmed.ncbi.nlm.nih.gov/34807575
https://pubmed.ncbi.nlm.nih.gov/34807575
The development of magnetic sensors simultaneously satisfying high magnetic sensitivity and high spatial resolution becomes more important in a wide range of fields including solid-state physics and life science. The nitrogen-vacancy (NV) center in d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d7b2f1b478411ca085a6c4b3e2b431c
https://doi.org/10.5772/intechopen.84204
https://doi.org/10.5772/intechopen.84204
Autor:
Sunuk Choe, Heeseong Kang, Donghun Lee, Myeongwon Lee, Chul Ho Lee, Jungbae Yoon, Jooeon Oh, Dongkwon Lee
Publikováno v:
Current Applied Physics. 18:1066-1070
Sensing temperature with high precision and high spatial resolution is challenging and requires novel temperature measurement techniques. Recently, an atomic-scale thermal sensor based on a defect center in diamond, i.e., a nitrogen-vacancy (NV) cent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce11fa090228ccf69bd1258934df493
https://doi.org/10.1016/j.cap.2018.06.002
https://doi.org/10.1016/j.cap.2018.06.002
Autor:
Shin-Keun Kim, Hyungcheol Shin, Moon-Sik Seo, Keum Hwan Noh, Gil-Bok Choi, Jaeyeol Park, Myeongwon Lee, Myounggon Kang, Changbeom Woo
Publikováno v:
2019 Symposium on VLSI Technology.
Right after program, stored electrons in the shallow nitride trap level can be released less than a few seconds. By setting the delay between program and reading phase to as small as 10μs, we found that several mechanisms are mixed when stored elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f266f32d225a3196b8f0b2b892a88d9
https://doi.org/10.23919/vlsit.2019.8776579
https://doi.org/10.23919/vlsit.2019.8776579
Autor:
Nguyen, Lan-Anh T., Dhakal, Krishna P., Yuhan Lee, Wooseon Choi, Tuan Dung Nguyen, Chengyun Hong, Dinh Hoa Luong, Young-Min Kim, Jeongyong Kim, Myeongwon Lee, Taeyoung Choi, Heinrich, Andreas J., Ji-Hee Kim, Donghun Lee, Dinh Loc Duong, Young Hee Lee
Publikováno v:
ACS Nano; 12/28/2021, Vol. 15 Issue 12, p20267-20277, 11p
Mapping current profiles of point-contacted graphene devices using single-spin scanning magnetometer
Autor:
Gil-Ho Lee, Yuhan Lee, Kenji Watanabe, Myeongwon Lee, Takashi Taniguchi, Hong Gyu Park, Seong Jang, Woochan Jung, Ha Reem Kim, Donghun Lee
Publikováno v:
Applied Physics Letters. 118:033101
We demonstrate two-dimensional mapping of current flow in graphene devices by using a single-spin scanning magnetometer based on a nitrogen-vacancy defect center in diamond. We first image the stray magnetic field generated by the current and then re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b62878234c9aee86d29b32e96e15858c
https://doi.org/10.1063/5.0037899
https://doi.org/10.1063/5.0037899
Autor:
Doohyeok Lim, Junggwon Yun, Youngin Jeon, Myeongwon Lee, Yoonjoong Kim, Minsuk Kim, Sangsig Kim
Publikováno v:
Nano Research. 9:3656-3662
In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3088c4eddaaedb7b2a73d055165b6740
https://doi.org/10.1007/s12274-016-1235-2
https://doi.org/10.1007/s12274-016-1235-2
Publikováno v:
Nano Research. 9:1409-1417
In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f823e3fbc0022835e1f27c9e5d0232
https://doi.org/10.1007/s12274-016-1036-7
https://doi.org/10.1007/s12274-016-1036-7