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pro vyhledávání: '"Myeongsu Chae"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 581-586 (2024)
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage
Externí odkaz:
https://doaj.org/article/ab1ad5f573de4b1e8a372aaca85675e0
Autor:
Myeongsu Chae, Hyungtak Kim
Publikováno v:
Micromachines, Vol 14, Iss 5, p 977 (2023)
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN
Externí odkaz:
https://doaj.org/article/ef3f34050a014eed9a7fe4d3a4bbee27