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pro vyhledávání: '"Myeong-Jun Cha"'
Publikováno v:
IEEE Access, Vol 12, Pp 7540-7550 (2024)
Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN HEMTs are being utilized extensively to achieve high efficiency. However, securing a sufficient margin voltage between the drain–source sensing vol
Externí odkaz:
https://doaj.org/article/5ef7d0c3da7e402393b7ba4cb6c12e2d
