Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Myeong-Ho Kim"'
Autor:
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 564-568 (2024)
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in o
Externí odkaz:
https://doaj.org/article/0ebef8af161c4d67b5095f0a9d0c8274
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105008-105008-5 (2020)
We introduce a transparent diode that consists of a coupled junction of amorphous indium tin zinc oxide and Al2O3. In addition, the photo-sensing behavior under visible light was investigated. In the initial dark state, the diode exhibited maximum on
Externí odkaz:
https://doaj.org/article/a6ef739050ef483dbc58c9b8bb1425cf
Autor:
Dong-Ho Lee, Hwan-Seok Jeong, Yeong-Gil Kim, Myeong-Ho Kim, Kyoung-Seok Son, Jun-Hyung Lim, Sang-Hun Song, Hyuck-In Kwon
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 23:79-87
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2e3fb7df8bbd385247196b1dd9ac6d
https://doi.org/10.5573/jsts.2023.23.1.79
https://doi.org/10.5573/jsts.2023.23.1.79
Publikováno v:
The Korea Journal of Sport. 19:67-76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29df7497960a5581e726df144eede12a
https://doi.org/10.46669/kss.2021.19.3.006
https://doi.org/10.46669/kss.2021.19.3.006
Autor:
Dae Hwan Kim, Hwan-Seok Jeong, Dong-Ho Lee, Seong-Hyun Hwang, Myeong-Ho Kim, Sunhee Lee, Jun Hyung Lim, Hyuck-In Kwon
Publikováno v:
Coatings, Vol 11, Iss 1135, p 1135 (2021)
Coatings
Volume 11
Issue 9
Coatings
Volume 11
Issue 9
The interface and bulk trap densities were separately extracted from self-aligned top-gate (SA-TG) coplanar indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using the low-frequency capacitance–voltage (C–V) characteristics and space-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09a28988a04121f28ac6869eb2d6432d
https://www.mdpi.com/2079-6412/11/9/1135
https://www.mdpi.com/2079-6412/11/9/1135
Publikováno v:
Solid-State Electronics. 126:87-91
In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b5b208b235fa0ca3b19b278f45aaf3
https://doi.org/10.1016/j.sse.2016.09.010
https://doi.org/10.1016/j.sse.2016.09.010
Publikováno v:
SID Symposium Digest of Technical Papers. 49:1021-1023
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1efd0ab71b640bedd4ce1cd300dbafed
https://doi.org/10.1002/sdtp.12197
https://doi.org/10.1002/sdtp.12197
Autor:
Myeong Ho Kim, Youn Gyoung Chang, Kwon Shik Park, Jun Sun Lee, Jong Un Kim, Dong Gyu Kim, Duck Kyun Choi
Publikováno v:
RSC advances. 9(36)
We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (VTH) shift of −6.2 V after 100 Gy X-ray irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6de613a214745b267e67fc847dbd3c4
https://pubmed.ncbi.nlm.nih.gov/35515555
https://pubmed.ncbi.nlm.nih.gov/35515555
Autor:
Tae-Young Ahn, Min Seok Cho, Hyeon Jin Choi, Myeong Ho Kim, Jaisoo Kim, Dong Suk Park, Man Jung Kang, Hong Sik Shim, Byoung Kyu Kim
Publikováno v:
Plant disease. 96(4)
In this study, we developed a reliable, quick, and accurate quantitative polymerase chain reaction (qPCR) assay to detect grain rot caused by Burkholderia glumae in rice seed. The control of bacterial grain rot is difficult, and the only practical me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2abebfc5321d0c6145ffe8dc3e67c175
https://pubmed.ncbi.nlm.nih.gov/30727429
https://pubmed.ncbi.nlm.nih.gov/30727429
Autor:
Gupta, Gajendra1,2, Myeong Ho Kim1,2, Hu Zhou1, Chang Yeon Lee2, Jinkwon Kim1 jkim@kongju.ac.kr
Publikováno v:
Bulletin of the Korean Chemical Society. Dec2015, Vol. 36 Issue 12, p2841-2845. 5p.