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pro vyhledávání: '"Myeong-Bum Lee"'
Publikováno v:
Journal of Applied Physics. 83:139-144
For tantalum pentoxide capacitors in 1 Gbit dynamic random access memory, titanium nitride is adopted as the top electrode. After postannealing at temperatures higher than 750 °C, the capacitance of Ta2O5 reduces due to an interfacial reaction betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d9fd3c3021682448ae087822aa2b20
https://doi.org/10.1063/1.366732
https://doi.org/10.1063/1.366732
