Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Myeong Jun Jung"'
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 67, Iss No 4, Pp 1503-1506 (2022)
Zinc oxide (ZnO) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of ZnO thin films expands diverse applications, such as growth on glass and organic ma
Externí odkaz:
https://doaj.org/article/b6e7012319e84b7a948193aaae818fec
Autor:
Myeong Jun Jung, Myeongjun Ji, Jeong Hwan Han, Young-In Lee, Sung-Tag Oh, Min Hwan Lee, Byung Joon Choi
Publikováno v:
Ceramics International. 48:36773-36780
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92538f0b005b748116e4d7860fae66e4
https://doi.org/10.1016/j.ceramint.2022.08.241
https://doi.org/10.1016/j.ceramint.2022.08.241
Publikováno v:
Journal of the Korean Physical Society. 81:241-246
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8caa61bf969a53aee8092f54673f1ae4
https://doi.org/10.1007/s40042-022-00529-4
https://doi.org/10.1007/s40042-022-00529-4
Publikováno v:
Transactions on Electrical and Electronic Materials. 23:337-342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d09850924fa9ccc4dfb8e1c3b366d37a
https://doi.org/10.1007/s42341-022-00400-0
https://doi.org/10.1007/s42341-022-00400-0
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:22792-22802
Modification of interface properties in Pt/n-InP Schottky contacts with atomic layer deposited ZnO interlayer (IL) (5 and 10 nm) has been carried out and the electrical properties were investigated using current–voltage (I–V) and capacitance–vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3006dbdb8a54f7ff380496d7d44947
https://doi.org/10.1007/s10854-021-06758-w
https://doi.org/10.1007/s10854-021-06758-w
Publikováno v:
ACS omega. 7(45)
In this study, SnSe powders are nanocoated with ZnO grown by atomic layer deposition (ALD) with different ALD ZnO pulse cycles. Subsequently, the current transport mechanisms of Pt/ZnO-coated SnSe junctions are electrically investigated. A decrease i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::285a976036acf6463b7cc9577df9cd53
https://pubmed.ncbi.nlm.nih.gov/36406507
https://pubmed.ncbi.nlm.nih.gov/36406507
Publikováno v:
Journal of Korean Powder Metallurgy Institute. 28:239-245
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d9c0617f03515bae9c8f96cf031c5e
https://doi.org/10.4150/kpmi.2021.28.3.239
https://doi.org/10.4150/kpmi.2021.28.3.239
Publikováno v:
Materials Today Communications. 33:104434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4826efac5b48d2283f32d3925e3bf4
https://doi.org/10.1016/j.mtcomm.2022.104434
https://doi.org/10.1016/j.mtcomm.2022.104434
Publikováno v:
Solid State Communications. 344:114685
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42a118822a0f5d2c5b3ef620601c3cd4
https://doi.org/10.1016/j.ssc.2022.114685
https://doi.org/10.1016/j.ssc.2022.114685
Publikováno v:
Physica Scripta. 97:035805
In this study, ZnO (10 nm) and TiO2 (2 nm) were grown on a GaN substrate via atomic layer deposition, and the modified properties of Pt/GaN Schottky diodes with ZnO and ZnO/TiO2 interlayers (ILs) were electrically investigated. The barrier height inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d327c7dee07b07243c8f31bc0bed0c
https://doi.org/10.1088/1402-4896/ac5085
https://doi.org/10.1088/1402-4896/ac5085