Výsledky vyhledávání

Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition

Autor: Arthur Weeber, Mwpe Lamers, G Gijs Dingemans, Ingrid G. Romijn, Hcm Harm Knoops, van de Bwh Bas Loo, Wmm Erwin Kessels, G.J.M. Janssen

Publikováno v: Solar Energy Materials and Solar Cells, 143, 450-456. Elsevier

To achieve high conversion efficiencies, advanced silicon solar cell architectures such as interdigitated back contact solar cells demand that defects at both the n+ and p+ doped Si surfaces are passivated simultaneously by a single passivation schem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8e215ec6d2b6970aed00483eca582d1
https://research.tue.nl/nl/publications/a131d284-01db-49e4-83fd-c2defc574642

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání