Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Mvs Chandrashekhar"'
Autor:
James W White, Olivia L Finnegan, Nick Tindall, Srihari Nelakuditi, David E Brown, Russell R Pate, Gregory J Welk, Massimiliano de Zambotti, Rahul Ghosal, Yuan Wang, Sarah Burkart, Elizabeth L Adams, Mvs Chandrashekhar, Bridget Armstrong, Michael W Beets, R Glenn Weaver
Publikováno v:
PLoS ONE, Vol 19, Iss 3, p e0286898 (2024)
The purpose of this study was to evaluate the reliability and validity of the raw accelerometry output from research-grade and consumer wearable devices compared to accelerations produced by a mechanical shaker table. Raw accelerometry data from a to
Externí odkaz:
https://doaj.org/article/fd206f3bca24412389942399b853e818
Publikováno v:
The Journal of Physical Chemistry C. 125:17796-17805
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31650c756065674c2ea4715625fcfd3d
https://doi.org/10.1021/acs.jpcc.1c04218
https://doi.org/10.1021/acs.jpcc.1c04218
Autor:
Mathew L. Kelley, Sakiru L. Abiodun, Mvs Chandrashekhar, Mohi Uddin Jewel, Fiaz Ahmed, Andrew B. Greytak, Mohammad Usman, Hans-Conrad zur Loye, Kamal Hussain
Publikováno v:
ACS Applied Electronic Materials. 3:1550-1555
We demonstrate a fast solution phase ligand exchange process to generate AgBiS2 nanocrystal inks using a cinnamic acid derivative as an additive to accelerate the phase transfer to polar solvents. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdddda34ad070c68a8c73cf70b8e1a56
https://doi.org/10.1021/acsaelm.0c01107
https://doi.org/10.1021/acsaelm.0c01107
Autor:
Kyoung Chul Park, Anna A. Berseneva, Sharfa Farzandh, Corey R. Martin, Simon R. Phillpot, Mark D. Smith, Natalia B. Shustova, Otega A. Ejegbavwo, Shubham Pandey, Donna A. Chen, Stavros Karakalos, Amy J. Brandt, Abhijai Mathur, Mvs Chandrashekhar, Brittany J. Heiser, Sophya Garashchuk, Gabrielle A. Leith, Vladislav V. Klepov
Publikováno v:
Chemical Science
Metal node engineering in combination with modularity, topological diversity, and porosity of metal–organic frameworks (MOFs) could advance energy and optoelectronic sectors. In this study, we focus on MOFs with multinuclear heterometallic nodes fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f30256d0e488a880a4a8c01d2b8e73f7
https://doi.org/10.1039/d0sc03053h
https://doi.org/10.1039/d0sc03053h
Autor:
Sheikh Mathab, Peker Milas, Md. Jahangir Alam, MVS Chandrashekhar, Michael G. Spencer, Birol Ozturk
Publikováno v:
Quantum 2.0 Conference and Exhibition.
We report room temperature zero phonon line emission peaks from RC series defects in electron beam irradiated cubic boron nitride crystals, which have the potential to be utilized in quantum sensing experiments.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee3b8708a9a5ff059fd3f7d79b43e04
https://doi.org/10.1364/quantum.2022.qtu2a.26
https://doi.org/10.1364/quantum.2022.qtu2a.26
Autor:
Kamal Hussain, Abdullah Mamun, Richard Floyd, Md Didarul Alam, Michael E. Liao, Kenny Huynh, Yekan Wang, Mark Goorsky, MVS Chandrashekhar, Grigory Simin, Asif Khan
Publikováno v:
Applied Physics Express. 16:014005
We report on high-quality n-Al0.87Ga0.13N-A0.64Ga0.36N heterostructures over single crystal AlN. For these pseudomorphic heterostructures, high-resolution X-ray and X-ray Topographic analysis was used to establish a threading dislocation density of 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01b36c2b425aec178f7db7bad27ae140
https://doi.org/10.35848/1882-0786/acb487
https://doi.org/10.35848/1882-0786/acb487
Autor:
Mvs Chandrashekhar, Cole A. Love-Baker, Joshua Letton, Mathew L. Kelley, Andrew B. Greytak, Grigory Simin, Fiaz Ahmed
Publikováno v:
ACS Applied Electronic Materials. 2:134-139
We demonstrate photovoltaic and photoconductive responses to near-infrared light in devices formed by depositing a film of gel permeation chromatography purified PbS quantum dots (QDs) on top of n-...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab53ba793410e0534477ba7245b804d2
https://doi.org/10.1021/acsaelm.9b00651
https://doi.org/10.1021/acsaelm.9b00651
Autor:
Shahab Mollah, Kamal Hussain, Abdullah Mamun, Md Didarul Alam, MVS Chandrashekhar, Grigory Simin, Asif Khan
Publikováno v:
Applied Physics Express. 15:104001
We report threshold voltage (V TH) control in ultrawide bandgap Al0.4Ga0.6N-channel metal oxide semiconductor heterostructure field-effect transistors using a high-temperature (300 °C) anneal of the high-k ZrO2 gate-insulator. Annealing switched the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b9f1f1745aa6a1580854ef51e0e75a
https://doi.org/10.35848/1882-0786/ac8bc4
https://doi.org/10.35848/1882-0786/ac8bc4
Autor:
Shahab Mollah, Mvs Chandrashekhar, Abdullah Mamun, Mikhail Gaevski, Mohi Uddin Jewel, Kamal Hussain, Grigory Simin, Didarul Alam, Richard Floyd, Asif Khan
Publikováno v:
Applied Physics Letters. 119:132106
We report on 193 nm excimer laser-based liftoff (LLO) of Al0.26Ga0.74N/GaN high electron mobility transistors (HEMTs) with thick (t > 10 μm) AlN heat spreading buffer layers grown over sapphire substrates. The use of the thick AlN heat spreading lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07b24a7389c44851c4142d9dbe8cad3
https://doi.org/10.1063/5.0064716
https://doi.org/10.1063/5.0064716