Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Muzeyyen Saritas"'
1
Comparison Of Three Ibscs In Terms Of Photo-Filling, Capture Cross Section Of Carriers, The Concentration Of Ib States And Overlapping Of Absorption Coefficients In The Wide Range Of Band Gaps Including Gaas
Autor: Volkan Kiziloglu, Tugba Selcen Navruz, Muzeyyen Saritas
Intermediate-band solar cells, IBSCs, with single IB provide better utilization of the solar spectrum than single junction solar cells. In this study, Model − B IBSC was proposed, investigated and compared with previously used two models named here
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15fef4642df30ac4875eac93348ecc1c
https://aperta.ulakbim.gov.tr/record/231134
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2
The effects of OFDM design parameters on the V2X communication performance: A survey
Autor: Muzeyyen Saritas, Sibel Arslan
Publikováno v: Vehicular Communications. 7:1-6
DSRC (Dedicated Short Range Communications) technology is particularly important for V2V (Vehicle-to-Vehicle), V2I (Vehicle-to-Infrastructure) and V2R (Vehicle-to-Roadside) communication in ITS (Intelligent Transportation System). The IEEE (The Insti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d56e79d19ce9fb5c4a35b228741e6a6
https://doi.org/10.1016/j.vehcom.2017.01.004
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3
Size Dependent Intermediate Band Energy Levels and Absorption of Bound States in Box Shaped Quantum Dots
Autor: Muzeyyen Saritas, Tugba Selcen Navruz, Volkan Kiziloglu
Publikováno v: 2018 International Conference on Photovoltaic Science and Technologies (PVCon).
The quantum dot intermediate band solar cells (QD-IBSCs) have not reached the expected efficiencies yet, because their sub-bandgap photocurrents are too low. In this work, a single band k.p method is used for the calculation of bound state energy lev
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1465764d33b62856e4ecfc50aeeb5f4d
https://doi.org/10.1109/pvcon.2018.8523884
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5
The detailed analysis of auger effect on the efficiency of intermediate band solar cells
Autor: Muzeyyen Saritas, Tugba Selcen Navruz
Publikováno v: Solar Energy Materials and Solar Cells. 93:1913-1922
The effect of Auger mechanism on the efficiency of intermediate band solarcell (IBSC) has been investigated using detailed balance equations. Four types of the IBSCs, cells (a), (b),(c) and (d) including optical transitions and low (below bandgap)/hi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ab0cd63e0c91158f693c5f4b5a0a290
https://doi.org/10.1016/j.solmat.2009.06.024
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6
Efficiency variation of the intermediate band solar cell due to the overlap between absorption coefficients
Autor: Muzeyyen Saritas, Tugba Selcen Navruz
Publikováno v: Solar Energy Materials and Solar Cells. 92:273-282
This paper studies the efficiency variation of the intermediate band solar cell (IBSC) due to the variation of amount of the overlap in the energy range of the different transitions in three band model, using detailed balance model. The effect of ove
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07692ecf0881376bc49e08b8048154d4
https://doi.org/10.1016/j.solmat.2007.08.012
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7
Minority and majority carrier traps associated with oxidation induced stacking faults in silicon
Autor: Anthony R. Peaker, Y. Qian, Muzeyyen Saritas, J. A. Davidson, M. Vandini, J.H. Evans
Publikováno v: Materials Science and Technology. 11:696-701
Majority and minority traps associated with oxidation induced stacking faults (OISFs) have been investigated by deep level transient spectroscopy and minority carrier transient spectroscopy. Electron and hole traps have been characterised in n and p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8d4eb1776c09d7c0d02946990f11348
https://doi.org/10.1080/17432847.1995.11948726
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8
Deep states associated with oxidation induced stacking faults in RTA p-type silicon before and after copper diffusion
Autor: Muzeyyen Saritas, Anthony R. Peaker
Publikováno v: Solid-State Electronics. 38:1025-1034
Oxygen induced stacking faults (OISF) with an average penetration depth of 1 μm have been generated at a density of 2 × 106 cm−2 in the rapid thermal annealed (RTA) p-type Czochralski (Cz) silicon. The photoluminescence, the hole capture and emis
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16f60a944309b825f6d97719d1f9008f
https://doi.org/10.1016/0038-1101(95)98671-o
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9
Comparison of minority‐carrier diffusion length measurements in silicon by the photoconductive decay and surface photovoltage methods
Autor: Harry D. McKell, Muzeyyen Saritas
Publikováno v: Journal of Applied Physics. 63:4561-4567
Diffusion lengths of minority carriers in the range 50–1200 μm were measured in n‐ and p‐type silicon single crystals with a wide range of resistivities by the surface photovoltage (SPV) and photoconductive decay (PCD) methods. Previously publ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d85776ecb07352c426e494c08ef1bce
https://doi.org/10.1063/1.340155
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10
Diffusion length studies in silicon by the surface photovoltage method
Autor: Muzeyyen Saritas, Harry D. McKell
Publikováno v: Solid-State Electronics. 31:835-842
Diffusion lengths of minority carriers in the range 1–1200 μm were measured in n and p type silicon single crystals with a wide range of resistivities by the surface photovoltage (SPV) method. Optimum measurement conditions were established by stu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::012aa6e0845ad49901524684387e3592
https://doi.org/10.1016/0038-1101(88)90036-6
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