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Publikováno v:
IEEE Transactions on Electron Devices. 68:2275-2280
The effects of a metal–interlayer–semiconductor (MIS) source/drain (S/D) contact structure on a dynamic random access memory (DRAM) cell transistor are investigated using 3-D technology computer-aided design simulation. When the MIS S/D contact s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfa329063c1953aa6281d5c0004cfb6
https://doi.org/10.1109/ted.2021.3066140
https://doi.org/10.1109/ted.2021.3066140
