2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces

Autor: Mutta, Geeta Rani, Carapezzi, Stefania

Publikováno v: In Applied Surface Science 31 July 2018 447:845-851

PAMBE grown InN layers electrical conduction by low frequency noise technique

Autor: Mutta, Geeta Rani, Faye, D., Brazzini, Tomaso, Méchin, Laurence, Routoure, Jean-Marc, Guillet, Bruno, Calle, F., Ruterana, P.

Publikováno v: ICDS 27 (27th International Conference on Defects in Semiconductors 2013)
ICDS 27 (27th International Conference on Defects in Semiconductors 2013), Jul 2013, Bologna, Italy

Poster; International audience; In the past decade, InN has emerged as a promising can didate for high speed electronic and optoelectronic applications up to terahertzfrequencies. It is well known that the presence of surface electron accumulation in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0b6e0d739458ff8fa040a6fbd02af167
https://hal.archives-ouvertes.fr/hal-00979757

Structural, optical and electronic properties of InN thinfilms and In alloys

Autor: Mutta, Geeta Rani

Publikováno v: Electronique. Université de Caen, 2012. Français
Electronique. Université de Caen, 2012. Français. ⟨NNT : ⟩

The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and high frequency components. The aim of this work has been twofold: to investigate the e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c4251816f2921ed2db28c0ef931beb60
https://hal.archives-ouvertes.fr/tel-01077170/document

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