Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Mutsuyuki Otsubo"'
Autor:
Yoshitsugu Yamamoto, Mutsuyuki Otsubo, Shigekazu Izumi, Norio Hayafuji, Kazuhiko Sato, Tetsuro Kunii, Shinichi Miyakuni
Publikováno v:
Journal of Crystal Growth. :404-410
Selective area regrowth of silicon-doped GaAs has been successfully achieved by chemical beam epitaxy (CBE) on dry etched trench structures. Abrupt doping-interface and excellent doping controllability have also been achieved by using a novel silicon
Autor:
K. Maemura, Mutsuyuki Otsubo, Nobuyuki Kasai, Y. Yoshii, Tadashi Takagi, N. Ogata, M. Nakayama, Y. Miyazaki, Yamamoto Kazuya
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:1964-1973
A 1.9-GHz single-chip GaAs RF transceiver has been successfully developed using a planar self-aligned gate FET suitable for low-cost and high-volume production. This IC includes a negative voltage generator for 3-V single voltage operation and a cont
Publikováno v:
Journal of Crystal Growth. 133:123-131
Carrier impurities accumulated at the interface of a molecular beam epitaxial (MBE) grown GaAs layer-substrate have been studied in connection with substrate surface preparation just prior to MBE growth. Although the accumulated impurity density of s
Autor:
Masayuki Sakai, Shigekazu Izumi, Norio Hayafuji, Mutsuyuki Otsubo, Kazuhiko Sato, Teruyuki Shimura
Publikováno v:
Applied Physics Letters. 69:2516-2518
Molecular beam epitaxially grown AlGaAs/GaAs heterojunctions were characterized by isothermal capacitance transient spectroscopy to study the performance of bipolar transistors with lattice‐mismatched InGaAs emitter contact layer. A deep level arou
Publikováno v:
Applied Physics Letters. 68:3102-3104
Silicon tetraiodide (SiI4), which has a very weak Si–I bond strength (70 kcal/mol), is successfully employed as a novel Si dopant in the chemical beam epitaxy of GaAs and InP. No precracking is necessary before supplying SiI4 with He carrier gas. H
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
It is reported that focused ion beam (FIB) techniques have been successfully applied to optimization of an X-band single stage MMIC (monolithic microwave integrated circuit) amplifier. Modification of MMIC components has been performed by etching of
Publikováno v:
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials.
Autor:
M. Komaru, Teruyuki Shimura, Mutsuyuki Otsubo, K. Kosaki, Hiroshi Matsuoka, H. Takano, M. Sakai, S. Izumi, S. Mitsui, Ryo Hattori
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Autor:
Teruyuki Shimura, M. Komaru, S. Terazono, S. Izumi, Mutsuyuki Otsubo, K. Nishitani, H. Nakano, T. Kuragaki, M. Sakai, K. Nagahama
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Autor:
K. Nishitani, K. Sumitani, Minoru Noda, M. Sakai, H. Nakano, T. Oku, Mutsuyuki Otsubo, H. Makino, S. Matsue
Publikováno v:
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials.