Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mutsuo Shibuya"'
Autor:
Kazuya Ishibashi, Mutsuo Shibuya, Kenichiro Takakura, Isao Tsunoda, Jyun Kudo, Katsuya Murakami, Ryohei Aida, Motoki Takahara, Toshiyuki Nakashima
Publikováno v:
physica status solidi c. 10:1588-1591
Crystalline quality and optical properties of gallium oxide films grown on SiO2substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth of gallium oxide (Ga2O3) film changed in a β -Ga2O3 film. Estim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9e62ec3853f15e003f649ea925a58b
https://doi.org/10.1002/pssc.201300242
https://doi.org/10.1002/pssc.201300242
Autor:
Motoki Takahara, Jyun Kudou, Hidenori Ohyama, Eddy Simoen, Mutsuo Shibuya, Isao Tsunoda, Cor Claeys, Toshiyuki Nakashima, Suguru Funasaki, Kenichiro Takakura, Katsuya Murakami
Publikováno v:
Materials Science Forum. 725:269-272
For the purpose of increasing the conductivity of β-Ga2O3 films, Sn doping in the β-Ga2O3 films has been explored using co-sputtering. Growth of β-Ga2O3 was confirmed by the XRD pattern for the undoped sample. However, it is shown that the Ga2O3 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d7a80ee0e02872695a0cb73a338b139
https://doi.org/10.4028/www.scientific.net/msf.725.269
https://doi.org/10.4028/www.scientific.net/msf.725.269
Autor:
Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami, Cor Claeys, Isao Tsunoda, Jyun Kudou, Kenichiro Takakura, Suguru Funasaki, Eddy Simoen, Hidenori Ohyama, Motoki Takahara
Publikováno v:
Materials Science Forum. 725:273-276
For the purpose of improving the crystalline quality of undoped and Si doped β-Ga2O3 films, high temperature annealing at 900°C was performed. The crystalline quality of the films investigated using scanning electron microscopy and X-ray diffractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9871a7041cad1622fab2a1d1a8fcffc7
https://doi.org/10.4028/www.scientific.net/msf.725.273
https://doi.org/10.4028/www.scientific.net/msf.725.273
Autor:
Kenichiro Takakura, Mutsuo Shibuya, D Koga, Y Kayamoto, Jan Vanhellemont, Joan Marc Rafi, Hidenori Ohyama, H Yamamoto
Publikováno v:
Physica B: Condensed Matter. 404:4854-4857
Si doped β-Ga2O3 films were grown on Si substrate by RF magnetron sputtering. The Si concentration varied from 0% to 50%. After the deposition of the amorphous Ga2O3 on the substrate, thermal annealing at 600 °C was performed in nitrogen ambient. P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a648fd21e54e4dbeeb18e7124c255fb0
https://doi.org/10.1016/j.physb.2009.08.167
https://doi.org/10.1016/j.physb.2009.08.167
Autor:
Mutsuo Shibuya, K. Kayamoto, T Kudou, K. Hayama, K. Shigaki, Kenichiro Takakura, Hidenori Ohyama
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:167-170
A transparent electrode of β-Ga2O3 films for solar cells, flat panel displays and other devices, which consist in chemically abundant and ecological elements of gallium and oxygen, were grown on quartz or silicon substrates by RF magnetron sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22eb4dd56c976c5251d70b0914ce2a04
https://doi.org/10.1007/s10854-007-9329-y
https://doi.org/10.1007/s10854-007-9329-y
Autor:
Cor Claeys, Suguru Funasaki, Kenichiro Takakura, Hidenori Ohyama, Daisuke Takeuchi, Eddy Simoen, Mutsuo Shibuya, Isao Tsunoda, Toshiyuki Nakashima, Katsuya Murakami
Publikováno v:
Physica B: Condensed Matter. 407:2900-2902
A transparent electrode of Si doped β-Ga2O3 films for solar cells, flat panel displays and other devices, which consists of chemically abundant and ecological friendly elements of gallium and oxygen, was grown on silicon substrates by RF magnetron s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06cbbf439bc07cd2cd6190be8e45a92c
https://doi.org/10.1016/j.physb.2011.08.061
https://doi.org/10.1016/j.physb.2011.08.061