Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mutsumi Sawada"'
Autor:
Akira Iso, Hideaki Kakiki, Daniel Hofmann, Mutsumi Sawada, Tomohiro Moriya, Yuichi Harada, Osamu Ikawa, Susumu Iwamoto, Yusuke Sekino, Thomas Heinzel
Publikováno v:
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
Recently main requirements for power conversion system are further downsizing and higher efficiency. To satisfy these requirements, enhanced power density of power modules should be the key to succeed. In this paper, 3.3kV SiC-Hybrid module with High
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b63adfcc1c8bf86a5d56cca14956b9c
https://doi.org/10.23919/epe17ecceeurope.2017.8099390
https://doi.org/10.23919/epe17ecceeurope.2017.8099390
Autor:
Hiroaki Ichikawa, Mutsumi Sawada, Osamu Ikawa, Alexander Theisen, Thomas Heinzel, Shinichi Yoshiwatari, Yuichi Onozawa
Publikováno v:
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe).
This paper describes 1700V IGBT module with the 7th generation (7G) IGBT technologies. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a533c907da24da73fb3af80d0cdd875
https://doi.org/10.1109/epe.2016.7695274
https://doi.org/10.1109/epe.2016.7695274
Autor:
Kazumi Takagiwa, Masatoshi Sugimoto, Mutsumi Sawada, Masanobu Iwaya, Naoto Fujishima, Hongfei Lu, Akio Sugi, Shinichiro Matsunaga
Publikováno v:
IEEJ Transactions on Industry Applications. 127:261-266
We developed a battery protection IC integrating a low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM). In the bi-directional switches, two MOSFETs share a drain region and there is neither drain contact nor drain metal wire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f965ef545644465ce2465d576e6dff
https://doi.org/10.1541/ieejias.127.261
https://doi.org/10.1541/ieejias.127.261
T-type IGBT module with new voltage class authentic RB-IGBT for DC-1000V solar inverter application.
Publikováno v:
2014 International Power Electronics & Application Conference & Exposition; 2014, p1393-1396, 4p