Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Mustafa Pinarbasi"'
Autor:
Hernandez Jacob Anthony, B. Kardasz, Deniz Bozdag, Steve Watts, Mustafa Pinarbasi, Jorge Vasquez, Thomas Boone, Chin Yuan-Tung, Georg Wolf, Pradeep Manandhar
Publikováno v:
IEEE Magnetics Letters. 11:1-4
The various memory applications such as embedded nonvolatile memory, embedded static random-access memory, and standalone dynamic random-access memory have different requirements for the performance of the perpendicular magnetic tunnel junction (pMTJ
Autor:
Yizhang Chen, Laura Rehm, Mustafa Pinarbasi, B. Kardasz, Egecan Cogulu, Andrew D. Kent, Georg Wolf
Publikováno v:
Physical Review Applied. 15
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperatur
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration spin-transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d126779eb19086d7404c70b6ea6fa53c
http://arxiv.org/abs/1910.00625
http://arxiv.org/abs/1910.00625
Autor:
B. Kardasz, Andrew D. Kent, Jamileh Beik Mohammadi, Mustafa Pinarbasi, Yizhang Chen, Georg Wolf
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a critical r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a82023fac3e9aada2155483b140a0629
Publikováno v:
Physical Review B. 94
Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter circular junctio
Publikováno v:
ECS Transactions. 35:33-38
CIGS is one of the most advanced absorber materials for thin film solar cells due to its direct bandgap, high absorption coefficient, and ability to yield good quality devices. CIGS-based solar cells have yielded the highest conversion efficiencies o
Publikováno v:
Journal of Applied Physics. 124:063902
Magnetic bilayers with different magnetic anisotropy directions are interesting for spintronic applications as they offer the possibility to engineer tilted remnant magnetization states. We investigate the ferromagnetic resonance (FMR) linewidth of m
Autor:
Andrew D. Kent, Gabriel D. Chaves-O'Flynn, Georg Wolf, Steve Watts, Mustafa Pinarbasi, Bartek Kardasz
Publikováno v:
SPIE Proceedings.
In this work we report on time resolved magnetization reversal driven by spin transfer torque in an orthogonal spin transfer (OST) magnetic tunnel junction device. We focus on the transitions from parallel (P) to antiparallel (AP) states and the reve
Autor:
Xiaoping Bian, Michael Andrew Parker, Dieter Weller, Kurt A. Rubin, Eric E. Fullerton, Mary Frances Doerner, M. E. Schabes, Qingzhi Peng, S. Yuan, M. Mirzamaani, Kentaro Takano, Mustafa Pinarbasi, Michael J. Madison, Michael F. Toney, T.C. Arnoldussen, Kai Tang, A. Polcyn, D. T. Margulies
Publikováno v:
IEEE Transactions on Magnetics. 37:1052-1058
A recording density of 35 Gbits/in/sup 2/ was achieved in longitudinal recording media with high-sensitivity GMR heads. The media displayed excellent thermal stability as a result of a CoPtCrB alloy with high magnetocrystalline anisotropy and relativ
Autor:
Hardayal Singh Gill, Bruce Alvin Gurney, Serhat Metin, Matthew J. Carey, Mustafa Pinarbasi, M. Parker, C. Tsang
Publikováno v:
Journal of Applied Physics. 87:5714-5719
NiO antiferromagnetic material possesses certain advantages for spin valve applications and has attracted considerable attention. Some of the key advantages are its insulating properties, very high corrosion resistance, less sensitivity to compositio