Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Mustafa Ayyad"'
Autor:
Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Yann Canvel, Nathali Franchina Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Mustafa Ayyad, Alex Merkulov, Gouri Sankar Kar, Sebastien Couet
Publikováno v:
IEEE Electron Device Letters. 44:614-617
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf7ee37c87f29632ccf8375605a4554
https://doi.org/10.1109/led.2023.3242302
https://doi.org/10.1109/led.2023.3242302
Autor:
Basoene Briggs, Roger Loo, Mustafa Ayyad, Manuel Mencarelli, Andriy Hikavyy, Clement Porret, Naoto Horiguchi, Robert Langer, Paola Favia
Publikováno v:
ECS Transactions. 104:139-146
This work reports on low temperature epitaxial growth solutions for the processing of advanced CMOS devices beyond the 3 nm technological node. The complex stacking of highly compositionally contrasted strained group IV materials is first demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a5001a4b87c213e0d6a74abc450b606
https://doi.org/10.1149/10404.0139ecst
https://doi.org/10.1149/10404.0139ecst
Autor:
Clement Porret, Gianluca Rengo, Mustafa Ayyad, Andriy Hikavyy, Erik Rosseel, Robert Langer, Roger Loo
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1043
The peculiarities and physical properties of gallium-doped (Ge:Ga) and gallium and boron co-doped germanium (Ge:Ga:B) epilayers grown at low temperature (320 °C) by chemical vapor deposition, are investigated and benchmarked against their boron-dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279804b222564184f610eac57573ccfb
https://doi.org/10.35848/1347-4065/acb1b9
https://doi.org/10.35848/1347-4065/acb1b9
Autor:
Gianluca Rengo, Clement Porret, Andriy Yakovitch Hikavyy, Gitte Coenen, Mustafa Ayyad, Richard J. H. Morris, Simone Pollastri, Danilo Oliveira De Souza, Didier Grandjean, Roger Loo, Andre Vantomme
Publikováno v:
ECS Meeting Abstracts. :1216-1216
Over the last few decades, MOSFET architectures have evolved from planar to 3D structures (FinFET and, more recently, gate-all-around and Forksheet devices) to improve the channel control at very scaled dimensions. In this framework, highly doped con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::304ee247ff75e4ff22dd6049c67658cf
https://doi.org/10.1149/ma2022-02321216mtgabs
https://doi.org/10.1149/ma2022-02321216mtgabs
Autor:
Gianluca Rengo, Clement Porret, Andriy Hikavyy, Erik Rosseel, Mustafa Ayyad, Richard J. H. Morris, Rami Khazaka, Roger Loo, André Vantomme
Publikováno v:
ECS Journal of Solid State Science and Technology
Contact resistivity reduction at the source/drain contacts is one of the main requirements for the fabrication of future MOS devices. Current research focuses on methods to increase the active doping concentration near the contact region in silicon-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::245f714a89df71bd10dbf34d33e3bbfb
https://doi.org/10.1149/2162-8777/ac546e
https://doi.org/10.1149/2162-8777/ac546e
Autor:
Richard J. H. Morris, Clement Porret, Mustafa Ayyad, Geoffrey Pourtois, Erik Rosseel, Andriy Hikavyy, Roger Loo, André Vantomme, Gianluca Rengo
Publikováno v:
ECS Meeting Abstracts. :934-934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5a7c82cfc91c6ee228fcd73bc701ab1
https://doi.org/10.1149/ma2021-0230934mtgabs
https://doi.org/10.1149/ma2021-0230934mtgabs
Autor:
Gianluca Rengo, André Vantomme, Richard J. H. Morris, Mustafa Ayyad, Roger Loo, Clement Porret, Erik Rosseel, Andriy Hikavyy
Publikováno v:
ECS Meeting Abstracts. :1096-1096
New generations of CMOS field effect transistors (FET) impose stringent controls of device geometries and material properties. Moving towards more aggressively scaled dimensions increases the level of the different specifications to mitigate the cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694b235648d626c2216aa48366395955
https://doi.org/10.1149/ma2021-01341096mtgabs
https://doi.org/10.1149/ma2021-01341096mtgabs
Publikováno v:
ECS Meeting Abstracts. :1735-1735
After a long period of research and development high mobility Ge-based materials are being introduced as channel materials of pMOS transistors targeting 5nm node and below [1, 2]. Due to an aggressive scaling, transistors source/drain (S/D) areas are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0938df5b1b36f41ff364bba61a11fc3f
https://doi.org/10.1149/ma2020-02241735mtgabs
https://doi.org/10.1149/ma2020-02241735mtgabs
Autor:
Lucas P. B. Lima, Clement Porret, Andriy Hikavyy, Mustafa Ayyad, André Vantomme, Roger Loo, Gianluca Rengo, Bastien Douhard, Qi Xie
Publikováno v:
ECS Meeting Abstracts. :1732-1732
Contact resistances are inherent to any device connected to the outside world. Lowering their contribution is essential for high-performance applications. This is the case for advanced Si CMOS technologies, for which series resistance parasitics beco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c7c55ef5c5c935072e8242d9ce98ce
https://doi.org/10.1149/ma2020-02241732mtgabs
https://doi.org/10.1149/ma2020-02241732mtgabs
Autor:
Abdullah Alfaifi, Mohammed Al Ibrahim, Rawan Aloteebi, Lujain Alrabghi, Raghad Alnemari, Mustafa Ayyad, Turki Bugshan, Mohsen Alotayfi, Hamad Alshammari, Hussain Aljuwayd
Publikováno v:
International Journal Of Community Medicine And Public Health. 5:3715
Strokes are a leading cause of morbidity and mortality across the world, in fact the third leading cause after heart diseases and cancer. Additionally, among the survivors of stroke, one-third suffers from permanent disabilities. Strokes can be class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6db282e47b5eac6dc9a5459f369a8f
https://doi.org/10.18203/2394-6040.ijcmph20183439
https://doi.org/10.18203/2394-6040.ijcmph20183439