Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Mustafa Alevli"'
Autor:
Nese Gungor, Mustafa Alevli
Publikováno v:
Journal of Vacuum Science & Technology A. 40:022404
Oxygen is often detected as an impurity in III-nitride films deposited by atomic layer deposition (ALD). The presence of oxygen has deep and unfavorable influences on the structural and optical properties of AlN. We have studied the oxygen incorporat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::136069ae83d7771e62f1d25bb038868b
https://doi.org/10.1116/6.0001498
https://doi.org/10.1116/6.0001498
Autor:
Mustafa Alevli, Nese Gungor
Using Raman spectroscopy and spectroscopic ellipsometry, the authors report on the refractive index and optical phonon modes of GaN layers with thicknesses from 6.57 to 84.35 nm, grown on sapphire (0001) substrates by hollow-cathode plasma-assisted a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76bddbb4de24be33365154b7507e5b84
https://aperta.ulakbim.gov.tr/record/67783
https://aperta.ulakbim.gov.tr/record/67783
Autor:
Nese Gungor, Mustafa Alevli
Publikováno v:
Journal of Vacuum Science & Technology A. 38:062407
In this work, we have studied the influence of N2/H2 plasma gas flow rates on the hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) growth of indium nitride (InN) films. The influence of N2/H2 plasma gas flow rates on crystallinity, l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455428ce561d656d223fbc603b7a3ea0
https://doi.org/10.1116/6.0000494
https://doi.org/10.1116/6.0000494
Autor:
Sabri Alkis, Ali Kemal Okyay, Selcuk Akturk, Ammar Nayfeh, Mustafa Alevli, Berna zay, Nikolaus Dietz, Farsad Imtiaz Chowdhury, Yal imath
Publikováno v:
Journal of Optics. 21:049501
This is a corrigendum for the article 2015 J. Opt. 17 105903 https://doi.org/10.1088/2040-8978/17/10/105903
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5ca552f371364fb92f7c47075b02683
https://doi.org/10.1088/2040-8986/ab0ac0
https://doi.org/10.1088/2040-8986/ab0ac0
Autor:
Nikolaus Dietz, Kucukgok Bahadir, Ian T. Ferguson, Sampath Gamage, Andrew G. Melton, Brian D. Thoms, Mustafa Alevli, Ananta R. Acharya, M. K. Indika Senevirathna
Publikováno v:
Applied Surface Science. 268:1-5
The thermal stability of InN layers grown on sapphire by high-pressure chemical vapor deposition has been studied by thermal desorption, atomic force microscopy, X-ray diffraction, and infrared reflection measurements. Desorption products from sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7ad6acdbb3c2a51cf5a7630f3c1b2d
https://doi.org/10.1016/j.apsusc.2012.10.184
https://doi.org/10.1016/j.apsusc.2012.10.184
Autor:
Nikolaus Dietz, Aaesha Alnuaimi, Bülend Ortaç, Ali Kemal Okyay, Sabri Alkis, Selcuk Akturk, Farsad Imtiaz Chowdhury, Ammar Nayfeh, Mustafa Alevli
Publikováno v:
Materials Research Express
In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 mu m p typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c195695d6f3395e1fc51a57c1fab2662
https://hdl.handle.net/11424/241360
https://hdl.handle.net/11424/241360
Autor:
Shahid Ali Leghari, Mustafa Alevli, Necmi Biyikli, Ali Haider, Nese Gungor, Oleksandr Tsymbalenko, Piter Deminskyi, Seda Kizir
Publikováno v:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date of Conference: 19-21 April 2016 GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97f515396daf13dfe71f1e7a59c9eb76
https://doi.org/10.1109/elnano.2016.7493030
https://doi.org/10.1109/elnano.2016.7493030
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films
Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films
Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N-2/H-2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::723e683d208a180ae870c73cf1a754b2
https://hdl.handle.net/11693/23702
https://hdl.handle.net/11693/23702
Publikováno v:
Thin Solid Films
article i nfo Aluminum nitride Thin film Atomic layer deposition Self-limiting growth Trimethylaluminum Wurtzite We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c23c97352f0a6d1115dce20c3784a889
https://doi.org/10.1016/j.tsf.2011.11.081
https://doi.org/10.1016/j.tsf.2011.11.081
Publikováno v:
physica status solidi (a). 209:266-271
Crystalline aluminum nitride (AlN) films have been prepared by plasma-enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self-limiting, constant growth rate per cycle temperature window (100–200 °C) was es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8af894b8c9170697d68a43ebda4885
https://doi.org/10.1002/pssa.201127430
https://doi.org/10.1002/pssa.201127430