Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Musavigharavi P"'
Autor:
Izhar, Fiagbenu, M. M. A., Yao, S., Du, X., Musavigharavi, P., Deng, Y., Leathersich, J., Moe, C., Kochhar, A., Stach, E. A., Vetury, R., Olsson III, R. H.
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quali
Externí odkaz:
http://arxiv.org/abs/2406.15431
Autor:
Kim, Kwan-Ho, Han, Zirun, Zhang, Yinuo, Musavigharavi, Pariasadat, Zheng, Jeffrey, Pradhan, Dhiren K., Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack,
Externí odkaz:
http://arxiv.org/abs/2403.12361
Autor:
Singh, Simrjit, Kim, Kwan-Ho, Jo, Kiyoung, Musavigharavi, Pariasadat, Kim, Bumho, Zheng, Jeffrey, Trainor, Nicholas, Chen, Chen, Redwing, Joan M., Stach, Eric A, Olsson III, Roy H, Jariwala, Deep
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials
Externí odkaz:
http://arxiv.org/abs/2311.08275
Autor:
Pradhan, Dhiren K., Moore, David C., Kim, Gwangwoo, He, Yunfei, Musavigharavi, Pariasadat, Kim, Kwan-Ho, Sharma, Nishant, Han, Zirun, Du, Xingyu, Puli, Venkata S., Stach, Eric A., Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerg
Externí odkaz:
http://arxiv.org/abs/2309.04555
Autor:
Liu, Xiwen, Ting, John, He, Yunfei, Fiagbenu, Merrilyn Mercy Adzo, Zheng, Jeffrey, Wang, Dixiong, Frost, Jonathan, Musavigharavi, Pariasadat, Esteves, Giovanni, Kisslinger, Kim, Anantharaman, Surendra B., Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
Publikováno v:
Nano Letters 2022 Volume 22 Issue 18 Pages 7690 7698
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel compute-in-memory
Externí odkaz:
http://arxiv.org/abs/2202.05259
Autor:
Kim, Kwan-Ho, Oh, Seyong, Fiagbenu, Merrilyn Mercy Adzo, Zheng, Jeffrey, Musavigharavi, Pariasadat, Kumar, Pawan, Trainor, Nicholas, Aljarb, Areej, Wan, Yi, Kim, Hyong Min, Katti, Keshava, Tang, Zichen, Tung, Vincent C., Redwing, Joan, Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as
Externí odkaz:
http://arxiv.org/abs/2201.02153
Autor:
Liu, Xiwen, Zheng, Jeffrey, Wang, Dixiong, Musavigharavi, Pariasadat, Stach, Eric A., Olsson III, Roy, Jariwala, Deep
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
Externí odkaz:
http://arxiv.org/abs/2012.10019
Autor:
Liu, Xiwen, Wang, Dixiong, Zheng, Jeffrey, Musavigharavi, Pariasadat, Miao, Jinshui, Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent e
Externí odkaz:
http://arxiv.org/abs/2010.12062
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Akademický článek
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