Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Murugesan Mariappan"'
Autor:
Toshiaki Shirasaka, Tadashi Okuda, Tomoaki Shibata, Satoshi Yoneda, Daisaku Matsukawa, Murugesan Mariappan, Mitsumasa Koyanagi, Takafumi Fukushima
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48a0e3b6b6b1bec9cdd9db8ceefcda3a
https://doi.org/10.1109/ectc51906.2022.00059
https://doi.org/10.1109/ectc51906.2022.00059
Autor:
Murugesan Mariappan, Shizu Fukuzumi, Tomoaki Shibata, Hiroyuki Hashimoto, JiChel Bea, Mitsumasa Koyanagi, Takafumi Fukushima
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d24ee183a471528e1c125af7594fd34
https://doi.org/10.1109/ectc51906.2022.00184
https://doi.org/10.1109/ectc51906.2022.00184
Autor:
Takafumi Fukushima, Shinichi Sakuyama, Masatomo Takahashi, Hiroyuki Hashimoto, Jichoel Bea, Theodorus Marcello, Hisashi Kino, Tetsu Tanaka, Mitsumasa Koyanagi, Murugesan Mariappan
Publikováno v:
2021 IEEE International 3D Systems Integration Conference (3DIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbd074f6a3c1d933e4591197456ad51
https://doi.org/10.1109/3dic52383.2021.9687601
https://doi.org/10.1109/3dic52383.2021.9687601
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
° A physical vapor deposition (PVD) formed WNi thinfilm over M1 (metal level 1) after its revealing in the via-last through-Si-via (TSV) process has been investigated for its ability in protecting the M1 metal during electroless (EL) plating of barr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::092973e40ca8349c2f4666e87c1c9d4e
https://doi.org/10.1109/ectc32696.2021.00060
https://doi.org/10.1109/ectc32696.2021.00060
Autor:
Aizawa, Ryo, Shiina, Urara, Nampo, Jinta, Sawa, Masahiro, Ohno, Akinobu, Murugesan, Mariappan, Fukushima, Takafumi
Publikováno v:
ECS Meeting Abstracts; 2024, Vol. MA2024 Issue 2, p1956-1956, 1p
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Si TEG chips containing Au-Sn micro-bumps (μ- bump) with various sizes (varying from 3 to 20 μm) and pitch values (between 6 μm and 30 μm) were fabricated, and the flip-chip bonded chips were characterized for micro-structure and electrical resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e85462ff7ed14fb2ae99ef94b70825
https://doi.org/10.1109/ectc32862.2020.00229
https://doi.org/10.1109/ectc32862.2020.00229
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
The electroless (EL) Ni layer conformally formed inside the high aspect ratio (AR, >10) through-Si-via (TSV) has been investigated for its role as seed layer in bottom-up Cu electroplating. From the electro-chemical adsorption monitoring data it was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4092b1d22d009ddd0e3c3e502783b55d
https://doi.org/10.1109/ectc32862.2020.00271
https://doi.org/10.1109/ectc32862.2020.00271
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Tetsu Tanaka, Rui Liang, Takafumi Fukushima, Murugesan Mariappan, Hisashi Kino, Sungho Lee, Kousei Kumahara, Yuki Miwa
Publikováno v:
3DIC
Through-silicon vias (TSVs) is one of the key technologies for 3D integration. To solve the issues induced by the high-temperature process for TSV liner formation in the multichip-to-wafer (MCtW) process, we applied the low-temperature SiO 2 depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a907abde32dfdc66fe863498c729041e
https://doi.org/10.1109/3dic48104.2019.9058843
https://doi.org/10.1109/3dic48104.2019.9058843
Publikováno v:
3DIC
An advanced Directed-Self-Assembly (DSA) assisted vertical nano-scale interconnection formation has been attempted inside deep Si trench structures for ultra-high-density 3D storage memory application. Based on Flory-Huggins theory, nano-cylindrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c7ea213d99b7f8470a0c773ef2c49c0
https://doi.org/10.1109/3dic48104.2019.9058849
https://doi.org/10.1109/3dic48104.2019.9058849