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Autor:
Murray, Lee Michael
InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire mid and long wave infrared spectrum gives a large number of applications for devices made from InAs/GaSb
Externí odkaz:
http://pqdtopen.proquest.com/#viewpdf?dispub=3609093
Autor:
Murray, Lee Michael
Publikováno v:
Theses and Dissertations.
InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire mid and long wave infrared spectrum gives a large number of applications for devices made from InAs/GaSb
Externí odkaz:
https://ir.uiowa.edu/etd/5029
https://ir.uiowa.edu/cgi/viewcontent.cgi?article=5029&context=etd
https://ir.uiowa.edu/cgi/viewcontent.cgi?article=5029&context=etd
