Lifetime degradation of n-type Czochralski silicon after hydrogenation.

Autor: Vaqueiro-Contreras, M., Markevich, V. P., Mullins, J., Halsall, M. P., Murin, L. I., Falster, R., Binns, J., Coutinho, J., Peaker, A. R.

Publikováno v: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 7p, 6 Graphs

Radiation-hard semiconductor detectors for SuperLHC

Autor: Bruzzi, M., Adey, J., Al-Ajili, A., Alexandrov, P., Alfieri, G., Allport, P.P., Andreazza, A., Artuso, M., Assouak, S., Avset, B.S., Barabash, L., Baranova, E., Barcz, A., Basile, A., Bates, R., Belova, N., Biagi, S.F., Bilei, G.M., Bisello, D., Blue, A., Blumenau, A., Boisvert, V., Bolla, G., Bondarenko, G., Borchi, E., Borrello, L., Bortoletto, D., Boscardin, M., Bosisio, L., V. Bowcock, T.J., Brodbeck, T.J., Broz, J., Brukhanov, A., Brzozowski, A., Buda, M., Buhmann, P., Buttar, C., Campabadal, F., Campbell, D., Candelori, A., Casse, G., Cavallini, A., Chilingarov, A., Chren, D., Cindro, V., Citterio, M., Collins, P., Coluccia, R., Contarato, D., Coutinho, J., Creanza, D., Cunningham, W., Cvetkov, V., Dalla Betta, G.-F., Davies, G., Dawson, I., de Boer, W., De Palma, M., Demina, R., Dervan, P., Dierlamm, A., Dittongo, S., Dobrzanski, L., Dolezal, Z., Dolgolenko, A., Eberlein, T., Eremin, V., Fall, C., Fasolo, F., Ferbel, T., Fizzotti, F., Fleta, C., Focardi, E., Forton, E., Franchenko, S., Fretwurst, E., Gamaz, F., Garcia, C., Garcia-Navarro, J.E., Gaubas, E., Genest, M.-H., Gill, K.A., Giolo, K., Glaser, M., Goessling, C., Golovine, V., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell, A., Grégoire, G., Gregori, P., Grigoriev, E., Grigson, C., Grillo, A., Groza, A., Guskov, J., Haddad, L., Härkönen, J., Harding, R., Hauler, F., Hayama, S., Hoeferkamp, M., Hönniger, F., Horazdovsky, T., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Hruban, A., Hughes, G., Ilyashenko, I., Irmscher, K., Ivanov, A., Jarasiunas, K., Jin, T., Jones, B.K., Jones, R., Joram, C., Jungermann, L., Kalinina, E., Kaminski, P., Karpenko, A., Karpov, A., Kazlauskiene, V., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Klaiber-Lodewigs, J., Kleverman, M., Klingenberg, R., Kodys, P., Kohout, Z., Korjenevski, S., Kowalik, A., Kozlowski, R., Kozodaev, M., Kramberger, G., Krasel, O., Kuznetsov, A., Kwan, S., Lagomarsino, S., Lari, T., Lassila-Perini, K., Lastovetsky, V., Latino, G., Latushkin, S., Lazanu, S., Lazanu, I., Lebel, C., Leinonen, K., Leroy, C., Li, Z., Lindström, G., Lindstrom, L., Linhart, V., Litovchenko, A., Litovchenko, P., Litvinov, V., Lo Giudice, A., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Mainwood, A., Makarenko, L.F., Mandić, I., Manfredotti, C., Marti i Garcia, S., Marunko, S., Mathieson, K., Mozzanti, A., Melone, J., Menichelli, D., Meroni, C., Messineo, A., Miglio, S., Mikuž, M., Miyamoto, J., Moll, M., Monakhov, E., Moscatelli, F., Murin, L., Nava, F., Naoumov, D., Nossarzewska-Orlowska, E., Nummela, S., Nysten, J., Olivero, P., Oshea, V., Palviainen, T., Paolini, C., Parkes, C., Passeri, D., Pein, U., Pellegrini, G., Perera, L., Petasecca, M., Piatkowski, B., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, I., Pintilie, L., Polivtsev, L., Polozov, P., Popa, A.I., Popule, J., Pospisil, S., Pucker, G., Radicci, V., Rafí, J.M., Ragusa, F., Rahman, M., Rando, R., Roeder, R., Rohe, T., Ronchin, S., Rott, C., Roy, P., Roy, A., Ruzin, A., Ryazanov, A., Sadrozinski, H.F.W., Sakalauskas, S., Scaringella, M., Schiavulli, L., Schnetzer, S., Schumm, B., Sciortino, S., Scorzoni, A., Segneri, G., Seidel, S., Seiden, A., Sellberg, G., Sellin, P., Sentenac, D., Shipsey, I., Sicho, P., Sloan, T., Solar, M., Son, S., Sopko, B., Spencer, N., Stahl, J., Stavitski, I., Stolze, D., Stone, R., Storasta, J., Strokan, N., Strupinski, W., Sudzius, M., Surma, B., Suuronen, J., Suvorov, A., Svensson, B.G., Tipton, P., Tomasek, M., Troncon, C., Tsvetkov, A., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Uher, J., Ullán, M., Vaitkus, J.V., Vanni, P., Velthuis, J., Verzellesi, G., Verbitskaya, E., Vrba, V., Wagner, G., Wilhelm, I., Worm, S., Wright, V., Wunstorf, R., Zabierowski, P., Zaluzhny, A., Zavrtanik, M., Zen, M., Zhukov, V., Zorzi, N.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 2005 541(1):189-201

Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment.

Autor: Quemener, V., Raeissi, B., Herklotz, F., Murin, L. I., Monakhov, E. V., Svensson, B. G.

Publikováno v: Journal of Applied Physics; 10/7/2015, Vol. 118 Issue 13, p135703-1-135703-9, 9p, 2 Charts, 7 Graphs

Donor levels of the divacancy-oxygen defect in silicon.

Autor: Markevich, V. P., Peaker, A. R., Hamilton, B., Lastovskii, S. B., Murin, L. I.

Publikováno v: Journal of Applied Physics; 2014, Vol. 115 Issue 1, p1-6, 6p, 1 Chart, 7 Graphs

The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Autor: Gusakov, V. E., Lastovskii, S.B., Murin, L. I., Tolkacheva, E.A., Khirunenko, L. I., Sosnin, M. G., Duvanskii, A.V., Markevich, Vladimir, Halsall, Matthew, Peaker, Anthony, Kolevatov, I, Ayedh, H.M., Monakhov, E. V., Svensson, B. G.

Publikováno v: Gusakov, V E, Lastovskii, S B, Murin, L I, Tolkacheva, E A, Khirunenko, L I, Sosnin, M G, Duvanskii, A V, Markevich, V, Halsall, M, Peaker, A, Kolevatov, I, Ayedh, H M, Monakhov, E V & Svensson, B G 2017, ' The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700261

New experimental and theoretical results on the silicon di-interstitial (I2) and itsinteractions with oxygen and carbon impurity atoms in Si crystals are reported. The electronic structure calculations indicate that I2 has an acceptor and a donor lev

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