Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Murielle Charpin"'
Autor:
J. Todeschini, Pierre-Olivier Sassoulas, Laurent Pain, Murielle Charpin, Yves Laplanche, Ulf Weidenmueller, Peter Hahmann, S. Gough, Daniel Henry
Publikováno v:
SPIE Proceedings.
An easy way to pattern 65nm CD target, when optical lithography technology is not available, is to use an Electron Beam Direct Write tool (EBDW), which is well known for its high resolution patterning potentials, with the drawback of a very low throu
Autor:
Y. Le Friec, Laurent Pain, S. Tourniol, K. Brosselin, David Herisson, Francois Leverd, M. Broekaart, S. Del Medico, V. De Jonghe, H. Leininger, F. Judong, Emmanuelle Luce, J. Todeschini, Daniel Henry, Murielle Charpin, Franck Arnaud, A. Beverina, R. Palla, M. Woo, Yves Laplanche
Publikováno v:
SPIE Proceedings.
With the objective to ramp-up 65 nm CMOS production in early 2005, preliminary works have to start today to develop the basic technological in order to be correctly prepared. In the absence of commercial advanced 193 nm scanners compatible with these
Autor:
Cécile Gourgon, A. Andrei, Masumi Suetsugu, Murielle Charpin, S. Tedesco, Ryotaro Hanawa, Tadashi Kusumoto, Daniel Henry, Yves Laplanche, Laurent Pain, H. Yokoyama
Publikováno v:
SPIE Proceedings.
In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for
Publikováno v:
Emerging Lithographic Technologies VI.
For the sub-90 nm node integrated circuits design rules, ITRS forecasts require minimal gate line width down to 55-35 nm. To reach such aggressive targets, most advanced optical lithography tools combined with all reticle enhancement techniques will