Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Muriel De Potter"'
Autor:
Muriel de Potter, Tom Schram, Geoffrey Pourtois, Karen Maex, Jorge A. Kittl, Christa Vrancken, Anabela Veloso, K.G. Anil, M. A. Pawlak, Mark J. H. van Dal, Caroline Demeurisse, Bert Brijs, Anne Lauwers
Publikováno v:
Microelectronic Engineering. 82:441-448
The Ni silicide phases and morphology in Ni fully silicided gates was investigated for varying deposited Ni to Si thickness ratios and rapid thermal processing conditions. The presence of NiSi"2, NiSi, Ni"3Si"2, Ni"2Si, Ni"3"1Si"1"2 and Ni"3Si as pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39433d5ea13e1061ef65fe69ff36e601
https://doi.org/10.1016/j.mee.2005.07.084
https://doi.org/10.1016/j.mee.2005.07.084
Autor:
Bencherki Mebarki, O. Chamirian, M. A. Pawlak, Tushar Mandrekar, Karen Maex, Muriel de Potter, Anne Lauwers, Xavier Pages, Jorge A. Kittl, Toon Raymakers, Richard Lindsay, Mark Van Dal
Publikováno v:
Materials Science and Engineering: B. :29-41
Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni 2 Si and NiSi on single-crystalline and poly-crystalline silicon and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90bf015f3a6479939b17ba3ce6b90baf
https://doi.org/10.1016/j.mseb.2004.07.028
https://doi.org/10.1016/j.mseb.2004.07.028
Publikováno v:
Journal of The Electrochemical Society. 146:1549-1556
The Si surface after reactive ion etching (RIE) and different cleaning procedures was characterized by angle resolved X‐ray photoelectron spectroscopy, high‐resolution transmission microscopy, and atomic force microscopy. It was shown that polyme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d551a8e8992c46acbbe81f114bff7b3
https://doi.org/10.1149/1.1391803
https://doi.org/10.1149/1.1391803
Autor:
Geert Van der Plas, Paresh Limaye, Abdelkarim Mercha, Herman Oprins, Cristina Torregiani, Steven Thijs, Dimitri Linten, Michele Stucchi, Katti Guruprasad, Dimitrios Velenis, Domae Shinichi, Vladimir Cherman, Bart Vandevelde, Veerle Simons, Ingrid De Wolf, Riet Labie, Dan Perry, Stephane Bronckers, Nikolas Minas, Miro Cupac, Wouter Ruythooren, Jan Van Olmen, Alain Phommahaxay, Muriel de Potter de ten Broeck, Ann Opdebeeck, Michal Rakowski, Bart De Wachter, Morin Dehan, Marc Nelis, Rahul Agarwal, Wim Dehaene, Youssef Travaly, Pol Marchal, Eric Beyne
Publikováno v:
2010 IEEE International Solid-State Circuits Conference - (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1906204f67f343416668e52febbcd5dd
https://doi.org/10.1109/isscc.2010.5434016
https://doi.org/10.1109/isscc.2010.5434016
Autor:
Richard Lindsay, Jorge A. Kittl, Mark Van Dal, Karen Maex, Christa Vrancken, Anne Lauwers, Muriel de Potter, O. Chamirian
Publikováno v:
MRS Proceedings. 810
ABCTRACTSilicidation of small features of various geometries and sizes using Ni-silicide was studied. Effects of dopants, surface preparation and silicidation parameters on silicide morphology were investigated. It was found that Ni silicide thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::991b6c5aa17d4a90f8cc27b0d60ace41
https://doi.org/10.1557/proc-810-c4.4
https://doi.org/10.1557/proc-810-c4.4
Autor:
Anne Lauwers, Muriel de Potter, Bartek Pawlak, Amal Akheyar, Karen Maex, Richard Lindsay, Simone Severi, Kirklen Henson
Publikováno v:
MRS Proceedings. 810
Making use of SPER (Solid Phase Epitaxial Regrowth) As and B deep source/drain junctions with high activation can be obtained at temperatures below 700°C. However, higher thermal budget is required to regrow and activate the dopants in the poly gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb980284117ad8751a1a1f8b36e8ac3d
https://doi.org/10.1557/proc-810-c2.2
https://doi.org/10.1557/proc-810-c2.2
Autor:
Karen Maex, M. A. Pawlak, Anne Lauwers, Muriel de Potter, Amal Akheyar, Geoffrey Pourtois, Richard Lindsay, Mark Van Dal, Anil Kottantharayil, Jorge A. Kittl, O. Chamirian
Publikováno v:
MRS Proceedings. 810
This paper presents an overview of Ni-alloy (Ni, Ni-Pt and Ni-Ta) silicide development for the 45 nm node and beyond, including applications to self-aligned silicide (SALICIDE) processes, reaction with SiGe and strained Si on SiGe, and applications t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882fab5438d94d50c0586e53c46d0fb8
https://doi.org/10.1557/proc-810-c2.1
https://doi.org/10.1557/proc-810-c2.1
Autor:
Oxana Chamirian, Muriel De Potter, Karen Maex, Jorge Kittl, Judit G. Lisoni, Mark Van Dal, Olivier Richard, Anne Lauwers, Richard Lindsay, Amal Akheyar
Publikováno v:
MRS Proceedings. 765
An overview of silicide development for the 65 nm node and beyond is presented. The scaling behavior of Co based and Ni based silicides to sub-100 nm junctions and sub-40 nm gate lengths was investigated. Co and Co-Ni silicides required a high therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53e20712dc83f4d8baed239b0cee127b
https://doi.org/10.1557/proc-765-d7.5
https://doi.org/10.1557/proc-765-d7.5
Publikováno v:
MRS Proceedings. 716
This work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cab5e88c917050b618ebe14192d236e
https://doi.org/10.1557/proc-716-b1.10
https://doi.org/10.1557/proc-716-b1.10
Autor:
Karen Maex, Richard Lindsay, Christa Vrancken, Muriel de Potter, O. Chamirian, Caroline Demeurisse, Anne Lauwers
Publikováno v:
MRS Proceedings. 716
In this work the reverse bias junction leakage was studied for Co-silicided 100 nm deep As source/drain junctions. The effect of pre-clean and silicidation temperature was investigated. The area component of the leakage current was found to be domina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca83042ebc148c0bd0382b7f427750c7
https://doi.org/10.1557/proc-716-b1.6
https://doi.org/10.1557/proc-716-b1.6