Zobrazeno 1 - 10
of 264
pro vyhledávání: '"Murdin, B."'
Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in
Externí odkaz:
http://arxiv.org/abs/1808.04195
Publikováno v:
Phys. Rev. B 97, 035205 (2018)
Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited states of a donor cluster is still scarce. Here we study the excitation
Externí odkaz:
http://arxiv.org/abs/1710.02006
Autor:
Greenland, P. T., Lynch, S. A., van der Meer, A. F. G., Murdin, B. N., Pidgeon, C. R., Redlich, B., Vinh, N. Q., Aeppli, G.
Publikováno v:
Nature, 465, 1057-1061 (24 June 2010)
We demonstrate coherent control of donor wavefunctions in phosphorous-doped silicon. Our experiments take advantage of a free electron laser to stimulate and observe photon echoes from, and Rabi oscillations between the ground and first excited state
Externí odkaz:
http://arxiv.org/abs/1008.3820
Autor:
Wittmann, B., Danilov, S. N., Bel'kov, V. V., Tarasenko, S. A., Novik, E. G., Buhmann, H., Brüne, C., Molenkamp, L. W., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Vinh, N. Q., van der Meer, A. F. G., Murdin, B., Ganichev, S. D.
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is
Externí odkaz:
http://arxiv.org/abs/1002.2528
Autor:
Vinh, N Q, Greenland, P T, Litvinenko, K, Redlich, B, van der Meer, A F G, Lynch, S A, Warner, M, Stoneham, A M, Aeppli, G, Paul, D J, Pidgeon, C R, Murdin, B N
Publikováno v:
PNAS Aug 5 2008 vol 105 no 31 10649-10653
One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the v
Externí odkaz:
http://arxiv.org/abs/0812.0148
Autor:
Danilov, S. N., Wittmann, B., Olbrich, P., Eder, W., Prettl, W., Golub, L. E., Beregulin, E. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Shalygin, V. A., Vinh, N. Q., van der Meer, A. F. G., Murdin, B., Ganichev, S. D.
We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that de
Externí odkaz:
http://arxiv.org/abs/0810.1205
Autor:
Wittmann, B., Golub, L. E., Danilov, S. N., Karch, J., Reitmaier, C., Kvon, Z. D., Vinh, N. Q., van der Meer, A. F. G., Murdin, B., Ganichev, S. D.
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at resonant
Externí odkaz:
http://arxiv.org/abs/0809.2718
Autor:
Zawadzki, W., Pfeffer, P., Bratschitsch, R., Chen, Z., Cundiff, S. T., Murdin, B. N., Pidgeon, C. R.
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins in the te
Externí odkaz:
http://arxiv.org/abs/0809.2456
Autor:
Weber, W., Golub, L. E., Danilov, S. N., Karch, J., Reitmaier, C., Wittmann, B., Bel'kov, V. V., Ivchenko, E. L., Kvon, Z. D., Vinh, N. Q., van der Meer, A. F. G., Murdin, B., Ganichev, S. D.
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis
Externí odkaz:
http://arxiv.org/abs/0804.0342
The spin-orbit (SO) coupling parameters for lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in [001]-grown delta-doped n-type InSb/In1-xAlxSb asymmetric quantum well
Externí odkaz:
http://arxiv.org/abs/0801.4849