Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Murashev, V.N."'
Autor:
Shchemerov, I.V., Legotin, S.A., Lagov, P.B., Pavlov, Y.S., Tapero, K.I., Petrov, A.S., Sidelev, A.V., Stolbunov, V.S., Kulevoy, T.V., Letovaltseva, M.E., Murashev, V.N., Konovalov, M.P., Kirilov, V.N.
Publikováno v:
In Nuclear Engineering and Technology August 2022 54(8):2871-2876
Autor:
Polyakov, A.Y., Alexanyan, L.A., Skorikov, M.L., Chernykh, A.V., Shchemerov, I.V., Murashev, V.N., Kim, Tae-Hwan, Lee, In-Hwan, Pearton, S.J.
Publikováno v:
In Journal of Alloys and Compounds 5 July 2021 868
Autor:
Krasnov, A.A., Starkov, V.V., Legotin, S.A., Rabinovich, O.I., Didenko, S.I., Murashev, V.N., Cheverikin, V.V., Yakimov, E.B., Fedulova, N.A., Rogozev, B.I., Laryushkin, A.S.
Publikováno v:
In Applied Radiation and Isotopes March 2017 121:71-75
Publikováno v:
In Journal of Alloys and Compounds 15 February 2014 586 Supplement 1:S553-S557
Autor:
Ammosov, V.V., Britvich, G.I., Chubenko, A.P., Drobzhev, V.I., Kol'tsov, G.I., Kryakunova, O.N., Kryukov, S.V., Merzon, G.I., Mukhamedshin, R.A., Murashev, V.N., Pavlyuchenko, V.P., Panasyuk, M.I., Ryabov, V.A., Ryazhskaya, O.G., Saito, T., Shchepetov, A.L., Sobolevskii, N.M., Soldatov, A.P., Suymenbaev, B.T., Vasil'chenko, V.G., Zatsepin, G.T., Zhukov, A.P.
Publikováno v:
In Nuclear Physics B (Proceedings Supplements) 2008 175:190-193
Autor:
Ammosov, V.V., Britvich, G.I., Chubenko, A.P., Drobzhev, V.I., Kol'tsov, G.I., Kryakunova, O.N., Kryukov, S.V., Merzon, G.I., Mukhamedshin, R.A., Murashev, V.N., Pavlyuchenko, V.P., Panasyuk, M.I., Ryabov, V.A., Ryazhskaya, O.G., Saito, T., Shchepetov, A.L., Sobolevskii, N.M., Soldatov, A.P., Suymenbaev, B.T., Vasil'chenko, V.G., Zatsepin, G.T., Zhukov, A.P.
Publikováno v:
In Nuclear Physics B (Proceedings Supplements) 2007 166:140-144
Autor:
Ammosov, V.V., Britvich, G.I., Chubenko, A.P., Drobzhev, V.I., Erlykin, A.D., Kol'tsov, G.I., Kryukov, S.V., Merzon, G.I., Mukashev, K.K., Mukhamedshin, R.A., Murashev, V.N., Panasyuk, M.I., Pavlyuchenko, V.P., Ryabov, V.A., Ryazhskaya, O.G., Saito, T., Shchepetov, A.L., Sobolevskii, N.M., Soldatov, A.P., Sultangazin, V.M., Trostin, I.S., Vasil'chenko, V.G., Zatsepin, G.T., Zhukov, A.P.
Publikováno v:
In Nuclear Physics B (Proceedings Supplements) 2006 151(1):426-429
Autor:
Legotin, S.A., Murashev, V.N., Yurchuk, S.Yu., Yaromskiy, V.P., Astahov, V.P., Kuz’mina, K.A., Rabinovich, O.I., El’nikov, D.S., Osipov, U.V., Krasnov, A.A., Didenko, S.I.
In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::7e048a65ca6240a49c488a4fc69056c6
http://essuir.sumdu.edu.ua/handle/123456789/43210
http://essuir.sumdu.edu.ua/handle/123456789/43210
Autor:
Bazalevsky, M.A., Koltsov, G.I., Didenko, S.I., Yurchuk, S.Yu., Legotin, S.A., Rabinovich, O.I., Murashev, V.N., Kazakov, I.P.
AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector de-vices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::07300661c97735643836d06ea21c9ad8
http://essuir.sumdu.edu.ua/handle/123456789/36131
http://essuir.sumdu.edu.ua/handle/123456789/36131
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